Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
BAT754L,115

BAT754L,115

Nexperia

DIODE ARRAY SCHOTTKY 30V 6TSSOP

18048

1PS302,115

1PS302,115

Nexperia

DIODE ARRAY GP 80V 170MA SOT323

15387

BAT54S,215

BAT54S,215

Nexperia

DIODE ARRAY SCHOTTKY 30V SOT23

254117

BAT754A,215

BAT754A,215

Nexperia

DIODE ARRAY SCHOTTKY 30V SOT23

2498

BAS21SW,115

BAS21SW,115

Nexperia

DIODE ARRAY GP 250V 225MA SOT323

17542

BAW56W/ZLX

BAW56W/ZLX

Nexperia

BAW56 - HIGH-SPEED SWITCHING DIO

345000

BAV23,215

BAV23,215

Nexperia

DIODE ARRAY GP 200V 225MA SOT143

88552

BAV170

BAV170

Nexperia

BAV170 - LOW-LEAKAGE DOUBLE DIOD

0

BAS101S,215

BAS101S,215

Nexperia

DIODE ARRAY GP 300V 200MA SOT23

299

PMEG6002TV,115

PMEG6002TV,115

Nexperia

DIODE ARRAY SCHOTTKY 60V SOT666

0

1PS70SB15,115

1PS70SB15,115

Nexperia

DIODE ARRAY SCHOTTKY 30V SOT323

16

BAT160C,115

BAT160C,115

Nexperia

DIODE ARRAY SCHOTTKY 60V SOT223

17493

BAV70QAZ

BAV70QAZ

Nexperia

DIODE HS SW 100V 175MA SOT1215

22

PMBD6100,215

PMBD6100,215

Nexperia

DIODE ARRAY GP 70V 215MA SOT23

15133

PMBD7000,215

PMBD7000,215

Nexperia

DIODE ARRAY GP 100V 215MA SOT23

45942

BAV199,235

BAV199,235

Nexperia

DIODE ARRAY GP 75V 160MA SOT23

8744

BAV70SRAZ

BAV70SRAZ

Nexperia

DIODE ARRAY GP 100V 355MA 6DFN

3821

BAV99W,115

BAV99W,115

Nexperia

DIODE ARRAY GP 100V 150MA SOT323

275643

1PS70SB86,115

1PS70SB86,115

Nexperia

DIODE ARRAY SCHOTTKY 15V SOT323

1917

BAS40-06W,115

BAS40-06W,115

Nexperia

DIODE ARRAY SCHOTTKY 40V SOT323

11422

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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