Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
1PS70SB46,115

1PS70SB46,115

Nexperia

NOW NEXPERIA 1PS70SB46 - RECTIFI

418659

BAV74,235

BAV74,235

Nexperia

DIODE ARRAY GP 50V 215MA SOT23

5014

PMBD7100,215

PMBD7100,215

Nexperia

DIODE ARRAY GP 100V 215MA SOT23

1132

BAS56,215

BAS56,215

Nexperia

DIODE ARRAY GP 60V 200MA SOT143B

14829

BAT120C,115

BAT120C,115

Nexperia

DIODE ARRAY SCHOTTKY 25V SOT223

4508

BAS70-06,215

BAS70-06,215

Nexperia

DIODE ARRAY SCHOTTKY 70V SOT23

19304

1PS70SB84,115

1PS70SB84,115

Nexperia

DIODE ARRAY SCHOTTKY 15V SOT323

33859

BAV70,235

BAV70,235

Nexperia

DIODE ARRAY GP 100V 215MA SOT23

16627

BAT721C,215

BAT721C,215

Nexperia

DIODE ARRAY SCHOTTKY 40V SOT23

49723

1PS301,115

1PS301,115

Nexperia

DIODE ARRAY GP 80V 160MA SOT323

1471

BAT54SW,115

BAT54SW,115

Nexperia

DIODE ARRAY SCHOTTKY 30V SOT323

127594

BAT721S,215

BAT721S,215

Nexperia

DIODE ARRAY SCHOTTKY 40V SOT23

37849

BAS16VY/ZLX

BAS16VY/ZLX

Nexperia

BAS16 SERIES - HIGH-SPEED SWITCH

2520000

BAS21VD,165

BAS21VD,165

Nexperia

DIODE ARRAY GP 200V 200MA 6TSOP

0

PMEG2020CPASX

PMEG2020CPASX

Nexperia

PMEG2020C - 20V, 2A LOW VF DUAL

15000

BAT54S,235

BAT54S,235

Nexperia

DIODE ARRAY SCHOTTKY 30V SOT23

68188

BAV99S,115

BAV99S,115

Nexperia

DIODE ARRAY GP 100V 200MA 6TSSOP

183104

BAW156VL

BAW156VL

Nexperia

DIODE ARRAY GP 75V 160MA SOT23

9800

BAV170VL

BAV170VL

Nexperia

DIODE ARRAY GP 85V 125MA SOT23

0

BAW56S,135

BAW56S,135

Nexperia

DIODE ARRAY GP 90V 250MA 6TSSOP

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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