Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
BAT54CM,315

BAT54CM,315

Nexperia

DIODE ARRAY SCHOTTKY 30V SOT883

0

1PS70SB85,115

1PS70SB85,115

Nexperia

DIODE ARRAY SCHOTTKY 15V SOT323

2632

BAS70-04W,115

BAS70-04W,115

Nexperia

DIODE ARRAY SCHOTTKY 70V SOT323

156221

BAV23S,235

BAV23S,235

Nexperia

DIODE ARRAY GP 200V 225MA SOT23

0

1PS88SB82,165

1PS88SB82,165

Nexperia

DIODE ARRAY SCHOTTKY 15V 6TSSOP

76720

1PS70SB45,115

1PS70SB45,115

Nexperia

NOW NEXPERIA 1PS70SB45 - RECTIFI

366000

1PS88SB82,115

1PS88SB82,115

Nexperia

DIODE ARRAY SCHOTTKY 15V 6TSSOP

5924

BAS40-04,215

BAS40-04,215

Nexperia

DIODE ARRAY SCHOTTKY 40V SOT23

3958

PMEG2020CPA,115

PMEG2020CPA,115

Nexperia

DIODE ARRAY SCHOTTKY 20V 3HUSON

0

BAT74,235

BAT74,235

Nexperia

DIODE ARRAY SCHOTTKY 30V SOT143B

0

BAV23S,215

BAV23S,215

Nexperia

DIODE ARRAY GP 200V 225MA SOT23

20605

BAT854AW,115

BAT854AW,115

Nexperia

DIODE ARRAY SCHOTTKY 40V SOT323

158573

BAS70-05,235

BAS70-05,235

Nexperia

DIODE ARRAY SCHOTTKY 70V SOT23

0

BAW56,215

BAW56,215

Nexperia

DIODE ARRAY GP 90V 215MA SOT23

20701

BAS70-07S,115

BAS70-07S,115

Nexperia

DIODE ARRAY SCHOTTKY 70V 6TSSOP

9250

BAS21VD,135

BAS21VD,135

Nexperia

DIODE ARRAY GP 200V 200MA 6TSOP

13851

BAS16VY,125

BAS16VY,125

Nexperia

DIODE ARRAY GP 100V 200MA 6TSSOP

0

BAT74,215

BAT74,215

Nexperia

DIODE ARRAY SCHOTTKY 30V SOT143B

64448

BAT54A,215

BAT54A,215

Nexperia

DIODE ARRAY SCHOTTKY 30V SOT23

31646

PMBD7000,235

PMBD7000,235

Nexperia

DIODE ARRAY GP 100V 215MA SOT23

148942

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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