Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
BAW56M,315

BAW56M,315

Nexperia

NOW NEXPERIA BAW56M - RECTIFIER

0

PMEG2005CT,215

PMEG2005CT,215

Nexperia

DIODE ARRAY SCHOTTKY 20V SOT23

53922

BAW56S,115

BAW56S,115

Nexperia

DIODE ARRAY GP 90V 250MA 6TSSOP

2781

BAV99S,135

BAV99S,135

Nexperia

DIODE ARRAY GP 100V 200MA 6TSSOP

25448

1PS70SB44,115

1PS70SB44,115

Nexperia

DIODE ARRAY SCHOTTKY 40V SOT323

6819

BAS70-05W,135

BAS70-05W,135

Nexperia

DIODE ARRAY SCHOTTKY 70V SOT323

0

BAS28,235

BAS28,235

Nexperia

DIODE ARRAY GP 75V 215MA SOT143B

17882

BAS70-05,215

BAS70-05,215

Nexperia

DIODE ARRAY SCHOTTKY 70V SOT23

29987

BAS28,215

BAS28,215

Nexperia

DIODE ARRAY GP 75V 215MA SOT143B

21095

BAW56W,135

BAW56W,135

Nexperia

DIODE ARRAY GP 90V 150MA SOT323

84

BAV23C,215

BAV23C,215

Nexperia

DIODE ARRAY GP 200V 225MA SOT23

12721

BAV170,215

BAV170,215

Nexperia

DIODE ARRAY GP 75V 215MA SOT23

2950

BAT721A,215

BAT721A,215

Nexperia

DIODE ARRAY SCHOTTKY 40V SOT23

5433

BAT54C,235

BAT54C,235

Nexperia

DIODE ARRAY SCHOTTKY 30V SOT23

11401

BAT54A,235

BAT54A,235

Nexperia

DIODE ARRAY SCHOTTKY 30V SOT23

7822

BAS70-07V,115

BAS70-07V,115

Nexperia

DIODE ARRAY SCHOTTKY 70V SOT666

0

BAS70-04,215

BAS70-04,215

Nexperia

DIODE ARRAY SCHOTTKY 70V SOT23

170726

BAT120S,115

BAT120S,115

Nexperia

DIODE ARRAY SCHOTTKY 25V SOT223

1777

BAT74V,115

BAT74V,115

Nexperia

DIODE ARRAY SCHOTTKY 30V SOT666

0

BAS40-04W,115

BAS40-04W,115

Nexperia

DIODE ARRAY SCHOTTKY 40V SOT323

2644

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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