Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
1PS70SB14/ZLF

1PS70SB14/ZLF

Nexperia

DIODE ARRAY SCHOTTKY 30V SC70

0

BAV99W/MIF

BAV99W/MIF

Nexperia

SWITCHING DIODE

0

BAV99S/DG/B3,115

BAV99S/DG/B3,115

Nexperia

DIODE ARRAY GP 100V 200MA SOT363

0

BAW56S/ZLX

BAW56S/ZLX

Nexperia

DIODE ARRAY GEN PURP 90V SOT363

0

BAW56W/ZLF

BAW56W/ZLF

Nexperia

DIODE ARRAY GEN PURP 90V SOT323

0

BAV99W/ZLF

BAV99W/ZLF

Nexperia

DIODE ARRAY GEN PURP 100V SOT323

0

BAV70W/ZLF

BAV70W/ZLF

Nexperia

DIODE ARRAY GEN PURP 100V SOT323

0

1PS70SB14/ZLX

1PS70SB14/ZLX

Nexperia

DIODE ARRAY SCHOTTKY 30V SC70

0

BAS16VY/ZLH

BAS16VY/ZLH

Nexperia

DIODE ARRAY GEN PURP 100V SOT363

0

BAW56S/DG/B2,115

BAW56S/DG/B2,115

Nexperia

DIODE ARRAY GP 90V 250MA SOT363

0

BAV70W/MIX

BAV70W/MIX

Nexperia

SWITCHING DIODE

0

BAS40-05/DG/B2,215

BAS40-05/DG/B2,215

Nexperia

DIODE ARRAY SCHOTTKY 40V TO236AB

0

BAV70W/SN/8X

BAV70W/SN/8X

Nexperia

DIODE ARRAY GP 100V 175MA SC70

0

BAV70W/ZLX

BAV70W/ZLX

Nexperia

DIODE ARRAY GEN PURP 100V SOT323

0

BAW56S/ZLF

BAW56S/ZLF

Nexperia

DIODE ARRAY GEN PURP 90V SOT363

0

BAV70W/MIF

BAV70W/MIF

Nexperia

SWITCHING DIODE

0

BAS40-06/DG/B2,215

BAS40-06/DG/B2,215

Nexperia

DIODE ARRAY SCHOTTKY 40V TO236AB

0

BAW56W/DG/B2F

BAW56W/DG/B2F

Nexperia

DIODE ARRAY GP 90V 150MA SC70

0

BAV99S/ZLX

BAV99S/ZLX

Nexperia

DIODE ARRAY GEN PURP 100V SOT363

0

BAV99W/ZLX

BAV99W/ZLX

Nexperia

DIODE ARRAY GEN PURP 100V SOT323

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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