Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
RB731UT108

RB731UT108

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 40V 6SMD

4828

DA204KT146

DA204KT146

ROHM Semiconductor

DIODE ARRAY GP 20V 100MA SMD3

55

RB228NS-30FHTL

RB228NS-30FHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 30V 30A LPDS

1000

RB218NS-60FHTL

RB218NS-60FHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 60V 20A LPDS

880

RBR10BM30AFHTL

RBR10BM30AFHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 30V 10A TO252

2466

RB531XNTR

RB531XNTR

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 30V UMD6

1601

RBR10BM30ATL

RBR10BM30ATL

ROHM Semiconductor

DIODE (RECTIFIER FRD) 30V-VR 10A

2475

BAW56HMFHT116

BAW56HMFHT116

ROHM Semiconductor

DIODE ARRAY GP 80V 215MA SSD3

1581

BAV70T116

BAV70T116

ROHM Semiconductor

DIODE ARRAY GP 70V 215MA SSD3

2468

RBQ30T65ANZC9

RBQ30T65ANZC9

ROHM Semiconductor

RBQ30T65ANZ IS LOW IR

1000

RFN30TS6DGC11

RFN30TS6DGC11

ROHM Semiconductor

DIODE ARRAY GP 600V 15A TO247

466

RB085T-40NZC9

RB085T-40NZC9

ROHM Semiconductor

RB085T-40NZ IS LOW IR

1959

RF1601NS2DTL

RF1601NS2DTL

ROHM Semiconductor

RF1601NS2D IS LOW VF

1000

RB298T100NZC9

RB298T100NZC9

ROHM Semiconductor

RB298T100NZ IS SUPER LOW IR

1000

RB215T-60

RB215T-60

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 60V TO220FN

960

RB098BM100FHTL

RB098BM100FHTL

ROHM Semiconductor

SCHOTTKY BARRIER DIODE

65

DAN202UMTL

DAN202UMTL

ROHM Semiconductor

DIODE ARRAY GP 80V 100MA UMD3

2374

DAP222WMTL

DAP222WMTL

ROHM Semiconductor

DIODE ARRAY GP 80V 100MA EMD3

111

RB088NS-30TL

RB088NS-30TL

ROHM Semiconductor

SUPER LOW IR, 30V, 10A, TO-263S

1000

UMP1NTR

UMP1NTR

ROHM Semiconductor

DIODE ARRAY GP 80V 25MA UMD5

3374

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
RFQ BOM Call Skype Email
Top