Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
RB095BM-90TL

RB095BM-90TL

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 90V TO252

0

RB886YT2R

RB886YT2R

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 15V EMD4

3430

RB085BM-30FHTL

RB085BM-30FHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 30V 10A TO252

2110

RB238NS150TL

RB238NS150TL

ROHM Semiconductor

SUPER LOW IR, 150V, 40A, TO-263S

978

RBQ10BM45AFHTL

RBQ10BM45AFHTL

ROHM Semiconductor

DIODE (RECTIFIER FRD) 45V-VRM 45

2485

SCS230AE2HRC

SCS230AE2HRC

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 650V TO247

218

DA227YT2R

DA227YT2R

ROHM Semiconductor

DIODE ARRAY GP 80V 100MA EMD4

0

SCS120AE2C

SCS120AE2C

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 600V TO247

0

RBQ10T65ANZC9

RBQ10T65ANZC9

ROHM Semiconductor

RBQ10T65ANZ IS LOW IR

1000

RB228T-60NZC9

RB228T-60NZC9

ROHM Semiconductor

SUPER LOW IR, 60V, 30A, ITO-220A

1000

DA228KFHT146

DA228KFHT146

ROHM Semiconductor

SWITCHING DIODES (CORRESPONDS TO

2965

RB238T100NZC9

RB238T100NZC9

ROHM Semiconductor

SUPER LOW IR, 100V, 40A, ITO-220

1000

RB095BM-30FHTL

RB095BM-30FHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 30V 6A TO252

2379

RBR10BGE30ATL

RBR10BGE30ATL

ROHM Semiconductor

30V, 10A, TO-252, CATHODE COMMON

0

RFN10T2D

RFN10T2D

ROHM Semiconductor

DIODE ARRAY GP 200V 5A TO220FN

461

BAT54CHMFHT116

BAT54CHMFHT116

ROHM Semiconductor

DIODE ARRAY SCHOT 30V 200MA SSD3

269

RBQ20BM100AFHTL

RBQ20BM100AFHTL

ROHM Semiconductor

LOW IR TYPE AUTOMOTIVE SCHOTTKY

2468

RBQ30NS45AFHTL

RBQ30NS45AFHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 45V 30A LPDS

879

RBR30T60ANZC9

RBR30T60ANZC9

ROHM Semiconductor

RBR30T60ANZ IS SCHOTTKY BARRIER

1000

RB205T-60

RB205T-60

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 60V TO220FN

680

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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