Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
RB541XNFHTR

RB541XNFHTR

ROHM Semiconductor

ROHM'S SCHOTTKY BARRIER DIODES A

2850

RB218NS100TL

RB218NS100TL

ROHM Semiconductor

RB218NS100 IS SUPER LOW IR<

1000

RB228T100

RB228T100

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 100V TO220F

490

SCS220KE2C

SCS220KE2C

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 1200V TO247

606

RBQ10NS65ATL

RBQ10NS65ATL

ROHM Semiconductor

ROHM'S SCHOTTKY BARRIER DIODES A

1900

RB088NS-30FHTL

RB088NS-30FHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 30V 10A LPDS

950

RBQ20NS45AFHTL

RBQ20NS45AFHTL

ROHM Semiconductor

DIODE (RECTIFIER FRD) 45V-VRM 45

899

RB215T-40

RB215T-40

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 40V TO220FN

467

RBR15BGE60ATL

RBR15BGE60ATL

ROHM Semiconductor

60V, 15A, TO-252, CATHODE COMMON

0

RBR10NS30AFHTL

RBR10NS30AFHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 30V 10A LPDS

1000

DAP202KT146

DAP202KT146

ROHM Semiconductor

DIODE ARRAY GP 80V 100MA SMD3

4836

RB085BM-60TL

RB085BM-60TL

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 60V TO252

668

RB706UM-40TL

RB706UM-40TL

ROHM Semiconductor

RB706UM-40 IS SCHOTTKY BARRIER D

1216

RB088BM-30FHTL

RB088BM-30FHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 30V 10A TO252

2453

RB085T-60

RB085T-60

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 60V TO220FN

431

RB218NS-30FHTL

RB218NS-30FHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 30V 20A LPDS

1000

BAT54SHMFHT116

BAT54SHMFHT116

ROHM Semiconductor

DIODE ARRAY SCHOT 30V 200MA SSD3

6626

RBR30T40ANZC9

RBR30T40ANZC9

ROHM Semiconductor

RBR30T40ANZ IS LOW VF

1000

RBR40NS60AFHTL

RBR40NS60AFHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 60V 40A LPDS

489

RF601BM2DFHTL

RF601BM2DFHTL

ROHM Semiconductor

SUPER FAST RECOVERY DIODES

2333

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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