Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
RBR30NS30AFHTL

RBR30NS30AFHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 30V 30A LPDS

960

RBR20BGE30ATL

RBR20BGE30ATL

ROHM Semiconductor

30V, 20A, TO-252, CATHODE COMMON

0

RB098BM-40FHTL

RB098BM-40FHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 40V 6A TO252

2484

RB095BGE-40TL

RB095BGE-40TL

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 45V TO252

18

RB228NS-40TL

RB228NS-40TL

ROHM Semiconductor

SUPER LOW IR, 40V, 30A, TO-263S

1000

RBR20BM30ATL

RBR20BM30ATL

ROHM Semiconductor

DIODE (RECTIFIER FRD) 30V-VR 20A

0

RB238NS150FHTL

RB238NS150FHTL

ROHM Semiconductor

DIODE (RECTIFIER FRD) 150V-VR 40

690

RB530XNTR

RB530XNTR

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 30V UMD6

5737

RB471ET148

RB471ET148

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 40V SMD5

27059

RB558WTL

RB558WTL

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 30V EMD3

9318

RB098BM150TL

RB098BM150TL

ROHM Semiconductor

RB098BM150 IS STANDARD SCHOTTKY

2310

RBR20NS60AFHTL

RBR20NS60AFHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 60V 20A LPDS

980

RB085BGE-30TL

RB085BGE-30TL

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 30V TO252

769

RB238NS-30TL

RB238NS-30TL

ROHM Semiconductor

SUPER LOW IR, 30V, 40A, TO-263S

1000

DAN217UT106

DAN217UT106

ROHM Semiconductor

DIODE ARRAY GP 80V 100MA UMD3

0

EMP11T2R

EMP11T2R

ROHM Semiconductor

DIODE ARRAY GP 80V 100MA EMD6

5813

RB215T-40NZC9

RB215T-40NZC9

ROHM Semiconductor

RB085T-40NZ IS LOW IR

990

RB715WMFHTL

RB715WMFHTL

ROHM Semiconductor

AUTOMOTIVE SCHOTTKY BARRIER DIOD

2853

RB088NS-60TL

RB088NS-60TL

ROHM Semiconductor

SUPER LOW IR, 60V, 10A, TO-263S

1000

RBQ10NS45ATL

RBQ10NS45ATL

ROHM Semiconductor

SCHOTTKY BARRIER DIODE

898

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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