Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
RB715FT106

RB715FT106

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 40V UMD3

4396

RB731XNTR

RB731XNTR

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 40V UMD6

965

RBR10BGE60ATL

RBR10BGE60ATL

ROHM Semiconductor

60V, 10A, TO-252, CATHODE COMMON

0

UMN10NTR

UMN10NTR

ROHM Semiconductor

DIODE ARRAY GP 80V 100MA UMD6

4617

RRE04EA6DFHTR

RRE04EA6DFHTR

ROHM Semiconductor

RECTIFYING DIODE (AEC-Q101 QUALI

2500

RB218T-30NZC9

RB218T-30NZC9

ROHM Semiconductor

SUPER LOW IR, 30V, 20A, ITO-220A

1000

RB706WM-40FHTL

RB706WM-40FHTL

ROHM Semiconductor

SCHOTTKY BARRIER DIODE (AEC-Q101

0

RB088NS-40FHTL

RB088NS-40FHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 40V 10A LPDS

990

DAN217UMFHTL

DAN217UMFHTL

ROHM Semiconductor

SWITCHING DIODES (CORRESPONDS TO

11

RB088NS150TL

RB088NS150TL

ROHM Semiconductor

ROHM'S SCHOTTKY BARRIER DIODES A

980

RB095BM-60FHTL

RB095BM-60FHTL

ROHM Semiconductor

DIODE (RECTIFIER FRD) 60V-VRM 60

1996

RBQ10BM65ATL

RBQ10BM65ATL

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 65V TO252

1311

RB095BM-40FHTL

RB095BM-40FHTL

ROHM Semiconductor

SCHOTTKY BARRIER DIODE

1240

RBR10NS40AFHTL

RBR10NS40AFHTL

ROHM Semiconductor

DIODE (RECTIFIER FRD) 40V-VR 10A

1910

RB228T-30NZC9

RB228T-30NZC9

ROHM Semiconductor

RB228T-30NZ IS SUPER LOW IR

1000

RBQ10NS100AFHTL

RBQ10NS100AFHTL

ROHM Semiconductor

LOW IR TYPE AUTOMOTIVE SCHOTTKY

1000

BAW156HMT116

BAW156HMT116

ROHM Semiconductor

BAW156HM IS HIGH RELIABILITY AND

850

RB715WMTL

RB715WMTL

ROHM Semiconductor

SCHOTTKY BARRIER DIODE - RB715WM

625

RB706D-40FHT146

RB706D-40FHT146

ROHM Semiconductor

SCHOTTKY BARRIER DIODE (AEC-Q101

2935

RB088T-40NZC9

RB088T-40NZC9

ROHM Semiconductor

SUPER LOW IR, 40V, 10A, ITO-220A

1000

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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