Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
RB085BM-30TL

RB085BM-30TL

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 30V TO252

0

RB088T100HZC9

RB088T100HZC9

ROHM Semiconductor

SCHOTTKY BARRIER DIODE

910

RB717FT106

RB717FT106

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 40V UMD3

4585

DAP202UMFHTL

DAP202UMFHTL

ROHM Semiconductor

SWITCHING DIODES (CORRESPONDS TO

0

RBQ15BM65ATL

RBQ15BM65ATL

ROHM Semiconductor

DIODE (RECTIFIER FRD) 65V-VRM 65

2500

RBR20T60ANZC9

RBR20T60ANZC9

ROHM Semiconductor

RBR20T60ANZ IS SCHOTTKY BARRIER

1000

SCS140AE2C

SCS140AE2C

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 600V TO247

0

DA221ZMT2L

DA221ZMT2L

ROHM Semiconductor

HIGH SPEED SWITCHING, 20V 100MA,

0

SCS230AE2C

SCS230AE2C

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 650V TO247

0

RF1601T2DNZC9

RF1601T2DNZC9

ROHM Semiconductor

RF1601T2DNZ IS SUPER FAST RECOVE

998

BAV99T116

BAV99T116

ROHM Semiconductor

DIODE ARRAY GP 75V 215MA SSD3

20

RF1601T2D

RF1601T2D

ROHM Semiconductor

DIODE ARRAY GP 200V 8A TO220FN

462

UMR12NTN

UMR12NTN

ROHM Semiconductor

DIODE ARRAY GP 80V 100MA UMD6

6505

RB088NS100TL

RB088NS100TL

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 100V LPDS

1222

RBR30NS60ATL

RBR30NS60ATL

ROHM Semiconductor

RBR30NS60A IS SCHOTTKY BARRIER D

1000

RF2001T2DNZC9

RF2001T2DNZC9

ROHM Semiconductor

RF2001T2DNZ IS SUPER FAST RECOVE

998

RB095BM-40TL

RB095BM-40TL

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 45V TO252

0

RBR20BM40AFHTL

RBR20BM40AFHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 40V 20A TO252

2761

RBQ15BGE45ATL

RBQ15BGE45ATL

ROHM Semiconductor

45V, 15A, TO-252, CATHODE COMMON

0

RB228NS100FHTL

RB228NS100FHTL

ROHM Semiconductor

DIODE (RECTIFIER FRD) 100V-VR 30

506

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
RFQ BOM Call Skype Email
Top