Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
RB238NS100FHTL

RB238NS100FHTL

ROHM Semiconductor

DIODE (RECTIFIER FRD) 100V-VR 40

503

RB558WMTL

RB558WMTL

ROHM Semiconductor

RB558WM IS SUPER LOW VF SCHOTTKE

0

RBR15BM60ATL

RBR15BM60ATL

ROHM Semiconductor

RBR15BM60A IS SCHOTTKY BARRIER D

0

RR274EA-400TR

RR274EA-400TR

ROHM Semiconductor

DIODE ARRAY GP 400V 500MA TSMD5

18251

RB218NS200TL

RB218NS200TL

ROHM Semiconductor

200V, 20A SUPER LOW IR TYPE SCHO

980

RBR40NS30ATL

RBR40NS30ATL

ROHM Semiconductor

RBR40NS30A IS LOW VF

1000

DA221MT2L

DA221MT2L

ROHM Semiconductor

DIODE ARRAY GP 20V 100MA VMD3

94

RB495DT146

RB495DT146

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 25V SMD3

1265

RBQ15BM45ATL

RBQ15BM45ATL

ROHM Semiconductor

RBQ15BM45A IS SCHOTTKY BARRIER D

2498

DAN222MFHT2L

DAN222MFHT2L

ROHM Semiconductor

DIODE SWITCHING 80V 0.3A 3-PIN

7095

RB088BM-60TL

RB088BM-60TL

ROHM Semiconductor

SUPER LOW IR, 60V, 10A, TO-252 (

2500

SCS240AE2HRC

SCS240AE2HRC

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 650V TO247

122

RB480KTL

RB480KTL

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 40V UMD4

137

RB095BGE-90TL

RB095BGE-90TL

ROHM Semiconductor

DIODE ARRAY SCHOTTKY

413

BAS40-06HMT116

BAS40-06HMT116

ROHM Semiconductor

BAS40-06HM IS SCHOTTKY BARRIER D

3000

RBR10NS60AFHTL

RBR10NS60AFHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 60V 10A LPDS

999

RB218T100NZC9

RB218T100NZC9

ROHM Semiconductor

SUPER LOW IR, 100V, 20A, ITO-220

1000

RBQ20BGE65ATL

RBQ20BGE65ATL

ROHM Semiconductor

65V, 20A, TO-252, CATHODE COMMON

0

RFUH30TS6DGC11

RFUH30TS6DGC11

ROHM Semiconductor

DIODE ARRAY GP 600V 15A TO247

338

DAN217UMTL

DAN217UMTL

ROHM Semiconductor

DIODE ARRAY GP 80V 100MA UMD3F

2

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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