Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
RBR10BM60AFHTL

RBR10BM60AFHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 60V 10A TO252

2363

EMN11T2R

EMN11T2R

ROHM Semiconductor

DIODE ARRAY GP 80V 100MA EMD6

12410

RB228NS100TL

RB228NS100TL

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 100V LPDS

578

RB481Y-40T2R

RB481Y-40T2R

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 40V EMD4

14

RB088NS150FHTL

RB088NS150FHTL

ROHM Semiconductor

DIODE (RECTIFIER FRD) 150V-VR 10

962

RBQ20T65ANZC9

RBQ20T65ANZC9

ROHM Semiconductor

RBQ20T65ANZ IS LOW IR

0

DAN222MT2L

DAN222MT2L

ROHM Semiconductor

DIODE ARRAY GP 80V 100MA VMD3

1893

RB085T-40HZC9

RB085T-40HZC9

ROHM Semiconductor

SCHOTTKY BARRIER DIODE

860

DAN217WMTL

DAN217WMTL

ROHM Semiconductor

DIODE ARRAY GP 80V 100MA EMD3F

9

RF601BM2DTL

RF601BM2DTL

ROHM Semiconductor

DIODE ARRAY GP 200V 6A TO252

1842

RF051UA1DTR

RF051UA1DTR

ROHM Semiconductor

DIODE ARRAY GP 100V 500MA TSMD6

598

RB218NS-60TL

RB218NS-60TL

ROHM Semiconductor

RB218NS-60 IS SUPER LOW IR<

1000

RB095BGE-60TL

RB095BGE-60TL

ROHM Semiconductor

DIODE ARRAY SCHOTTKY

1009

RBR15BM30ATL

RBR15BM30ATL

ROHM Semiconductor

DIODE (RECTIFIER FRD) 30V-VR 15A

2500

UMP11NTN

UMP11NTN

ROHM Semiconductor

DIODE ARRAY GP 80V 100MA UMD6

12000

RBQ20BM45ATL

RBQ20BM45ATL

ROHM Semiconductor

RBQ20BM45A IS LOW IR

2500

RBR30NS60AFHTL

RBR30NS60AFHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 60V 30A LPDS

1189

RB085BM-90FHTL

RB085BM-90FHTL

ROHM Semiconductor

SCHOTTKY BARRIER DIODE

2479

RB530XNFHTR

RB530XNFHTR

ROHM Semiconductor

ROHM'S SCHOTTKY BARRIER DIODES A

2990

RBQ15BM100AFHTL

RBQ15BM100AFHTL

ROHM Semiconductor

LOW IR TYPE AUTOMOTIVE SCHOTTKY

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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