Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
DAN202UT106

DAN202UT106

ROHM Semiconductor

DIODE ARRAY GP 80V 100MA UMD3

2474

RBQ10NS100ATL

RBQ10NS100ATL

ROHM Semiconductor

LOW IR, 100V, 10A, TO

0

RB088T150NZC9

RB088T150NZC9

ROHM Semiconductor

SUPER LOW IR, 150V, 10A, ITO-220

1000

RBR10BM60ATL

RBR10BM60ATL

ROHM Semiconductor

RBR10BM60A IS SCHOTTKY BARRIER D

0

RB088BM150TL

RB088BM150TL

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 150V TO252

0

RFN6BM2DFHTL

RFN6BM2DFHTL

ROHM Semiconductor

SUPER FAST RECOVERY DIODE (AEC-Q

1272

RB218T150NZC9

RB218T150NZC9

ROHM Semiconductor

SUPER LOW IR, 150V, 20A, ITO-220

1000

RB088BM-40TL

RB088BM-40TL

ROHM Semiconductor

SUPER LOW IR, 40V, 10A, TO-252 (

2375

DA380UT106

DA380UT106

ROHM Semiconductor

DIODE ARRAY GP 80V 100MA UMD3

6000

SCS220AE2C

SCS220AE2C

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 650V TO247

119

RB098BM150FHTL

RB098BM150FHTL

ROHM Semiconductor

SCHOTTKY BARRIER DIODE (CORRESPO

2028

RB298NS100TL

RB298NS100TL

ROHM Semiconductor

SUPER LOW IR, 100V, 30A, TO-263S

1000

RB088NS-40TL

RB088NS-40TL

ROHM Semiconductor

SUPER LOW IR, 40V, 10A, TO-263S

1000

DAN217WTL

DAN217WTL

ROHM Semiconductor

DIODE ARRAY GP 80V 100MA EMD3

2033

RB706F-40T106

RB706F-40T106

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 40V UMD3

21

RBQ20BGE45ATL

RBQ20BGE45ATL

ROHM Semiconductor

45V, 20A, TO-252, CATHODE COMMON

0

RB238T-60NZC9

RB238T-60NZC9

ROHM Semiconductor

DIODE SCHOTTKY SUPER LOW IR

958

DA227TL

DA227TL

ROHM Semiconductor

DIODE ARRAY GP 80V 100MA UMD4

17556

RB480Y-90T2R

RB480Y-90T2R

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 90V EMD4

218

RB088BM100FHTL

RB088BM100FHTL

ROHM Semiconductor

SCHOTTKY BARRIER DIODE

2484

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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