Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
BAS40-04HMFHT116

BAS40-04HMFHT116

ROHM Semiconductor

DIODE ARRAY SCHOT 40V 120MA SSD3

4550

RB218NS100FHTL

RB218NS100FHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 100V 20A LPDS

963

RBR30NS40ATL

RBR30NS40ATL

ROHM Semiconductor

DIODE (RECTIFIER FRD) 40V-VR 30A

1000

RB548WMTL

RB548WMTL

ROHM Semiconductor

RB548WM IS SCHOTTKY BARRIER DIOD

484

RB088BM-40FHTL

RB088BM-40FHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 40V 10A TO252

2451

RB088BGE150TL

RB088BGE150TL

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 150V TO252

2261

RB218T-40NZC9

RB218T-40NZC9

ROHM Semiconductor

SUPER LOW IR, 40V, 20A, ITO-220A

1000

RB215T-60NZC9

RB215T-60NZC9

ROHM Semiconductor

RB085T-40NZ IS LOW IR

905

BAV70HMT116

BAV70HMT116

ROHM Semiconductor

BAV70HM IS HIGH RELIABILITY AND

6000

BAV99HMT116

BAV99HMT116

ROHM Semiconductor

PMDU RECTIFYING DIODE

0

IMN11T110

IMN11T110

ROHM Semiconductor

DIODE ARRAY GP 80V 100MA 6SMD

2506

RF2001T3DNZC9

RF2001T3DNZC9

ROHM Semiconductor

RF2001T3DNZ IS SUPER FAST RECOVE

0

BAT54AHMT116

BAT54AHMT116

ROHM Semiconductor

BAT54AHM IS SCHOTTKY BARRIER DIO

2975

RB238NS-60TL

RB238NS-60TL

ROHM Semiconductor

SUPER LOW IR, 60V, 40A, TO-263S

1000

UMN11NFHTN

UMN11NFHTN

ROHM Semiconductor

SWITCHING DIODES (CORRESPONDS TO

4650

SCS240KE2C

SCS240KE2C

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 1200V TO247

145

RB705DT146

RB705DT146

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 40V SMD3

3000

RB557WMTL

RB557WMTL

ROHM Semiconductor

RB557WM IS SCHOTTKY BARRIER DIOD

3000

RB088NS200TL

RB088NS200TL

ROHM Semiconductor

200V, 10A SUPER LOW IR TYPE SCHO

1000

RB225NS-40FHTL

RB225NS-40FHTL

ROHM Semiconductor

DIODE (RECTIFIER FRD) 40V-VRM 40

590

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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