Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
DAP222MT2L

DAP222MT2L

ROHM Semiconductor

DIODE ARRAY GP 80V 100MA VMD3

107

RF1001T2DNZC9

RF1001T2DNZC9

ROHM Semiconductor

RF1001T2DNZ IS SUPER FAST RECOVE

0

DAP222WMFHTL

DAP222WMFHTL

ROHM Semiconductor

SWITCHING DIODES (CORRESPONDS TO

0

BAT54SHMT116

BAT54SHMT116

ROHM Semiconductor

BAT54SHM IS SCHOTTKY BARRIER DIO

2629

RB088T150FH

RB088T150FH

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 150V TO220F

429

RB238NS-30FHTL

RB238NS-30FHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 30V 40A LPDS

1000

RB548WMFHTL

RB548WMFHTL

ROHM Semiconductor

RB548WMFH IS THE HIGH RELIABILIT

7336

RBQ30NS45ATL

RBQ30NS45ATL

ROHM Semiconductor

DIODE (RECTIFIER FRD) 45V-VRM 45

1000

RB425DT146

RB425DT146

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 40V SMD3

1999

RBR10NS40ATL

RBR10NS40ATL

ROHM Semiconductor

DIODE (RECTIFIER FRD) 40V-VR 10A

994

RBR10NS30ATL

RBR10NS30ATL

ROHM Semiconductor

DIODE (RECTIFIER FRD) 30V-VR 10A

1000

RB215T-90

RB215T-90

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 90V TO220FN

583

RB228NS-60TL

RB228NS-60TL

ROHM Semiconductor

SUPER LOW IR, 60V, 30A, TO-263S

1000

RB225T-40

RB225T-40

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 40V TO220FN

3

RBQ20T45ANZC9

RBQ20T45ANZC9

ROHM Semiconductor

RBQ20T45ANZ IS LOW IR

1000

RBQ10BM45ATL

RBQ10BM45ATL

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 45V TO252

164

RB876WTL

RB876WTL

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 5V EMD3

2194

RB205T-90

RB205T-90

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 90V TO220FN

0

RB088NS200FHTL

RB088NS200FHTL

ROHM Semiconductor

200V, 10A SUPER LOW IR TYPE AUTO

1000

DAN217T146

DAN217T146

ROHM Semiconductor

DIODE ARRAY GP 80V 100MA SMD3

18280

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
RFQ BOM Call Skype Email
Top