Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
RB061US-30TR

RB061US-30TR

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 30V TSMD8

3000

BAV170HMFHT116

BAV170HMFHT116

ROHM Semiconductor

SWITCHING DIODE (LOW LEAKAGE)

4636

RB098BM-40TL

RB098BM-40TL

ROHM Semiconductor

SUPER LOW IR, 40V, 6A, TO-252 (D

0

RB706D-40T146

RB706D-40T146

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 40V SMD3

33

RBR20NS60ATL

RBR20NS60ATL

ROHM Semiconductor

RBR20NS60A IS SCHOTTKY BARRIER D

1000

RB731XNFHTR

RB731XNFHTR

ROHM Semiconductor

DIODE (RECTIFIER FRD) 40V-VRM 40

820

BAV70HMFHT116

BAV70HMFHT116

ROHM Semiconductor

DIODE ARRAY GP 80V 215MA SSD3

11865

DA228UT106

DA228UT106

ROHM Semiconductor

DIODE ARRAY GP 80V 100MA UMD3

2163

RBR20NS40AFHTL

RBR20NS40AFHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 40V 20A LPDS

1000

BAS40-06HMFHT116

BAS40-06HMFHT116

ROHM Semiconductor

DIODE ARRAY SCHOT 40V 120MA SSD3

190

UMN1NTR

UMN1NTR

ROHM Semiconductor

DIODE ARRAY GP 80V 25MA UMD5

3000

RB496KATR

RB496KATR

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 20V TUMD5

2577

RB238T-40NZC9

RB238T-40NZC9

ROHM Semiconductor

SUPER LOW IR, 40V, 40A, ITO-220A

1000

UMR11NTR

UMR11NTR

ROHM Semiconductor

DIODE ARRAY GP 80V 100MA UMD6

140

RB098BM100TL

RB098BM100TL

ROHM Semiconductor

RB098BM100 IS SUPER LOW IR<

2497

RBQ20BM45AFHTL

RBQ20BM45AFHTL

ROHM Semiconductor

SCHOTTKY BARRIER DIODE (AEC-Q101

4586

RBQ30NS65ATL

RBQ30NS65ATL

ROHM Semiconductor

DIODE (RECTIFIER FRD) 65V-VRM 65

1000

RBQ20BM65AFHTL

RBQ20BM65AFHTL

ROHM Semiconductor

SCHOTTKY BARRIER DIODE (AEC-Q101

2110

RB218T-60NZC9

RB218T-60NZC9

ROHM Semiconductor

SUPER LOW IR, 60V, 20A, ITO-220A

1000

DAN202KT146

DAN202KT146

ROHM Semiconductor

DIODE ARRAY GP 80V 100MA SMD3

52540

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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