Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
RB218NS150FHTL

RB218NS150FHTL

ROHM Semiconductor

SCHOTTKY BARRIER DIODE (AEC-Q101

78

DAN222TL

DAN222TL

ROHM Semiconductor

DIODE ARRAY GP 80V 100MA EMD3

84

RB425DFHT146

RB425DFHT146

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 40V SMD3

2803

RBR20T40ANZC9

RBR20T40ANZC9

ROHM Semiconductor

RBR20T40ANZ IS LOW VF

1000

RBR20NS30AFHTL

RBR20NS30AFHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 30V 20A LPDS

814

RBQ20NS65AFHTL

RBQ20NS65AFHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 65V 20A LPDS

0

UMN10NFHTR

UMN10NFHTR

ROHM Semiconductor

SWITCHING DIODES (CORRESPONDS TO

0

IMP11T110

IMP11T110

ROHM Semiconductor

DIODE ARRAY GP 80V 100MA 6SMD

0

RBR10T40ANZC9

RBR10T40ANZC9

ROHM Semiconductor

RBR10T40ANZ IS LOW VF

1000

SCS230KE2C

SCS230KE2C

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 1200V TO247

314

DAN222WMTL

DAN222WMTL

ROHM Semiconductor

DIODE ARRAY GP 80V 100MA EMD3

277

RB085BM-40FHTL

RB085BM-40FHTL

ROHM Semiconductor

SCHOTTKY BARRIER DIODE

6918

RBR10T60ANZC9

RBR10T60ANZC9

ROHM Semiconductor

RBR10T60ANZ IS SCHOTTKY BARRIER

1000

RBR20BGE40ATL

RBR20BGE40ATL

ROHM Semiconductor

40V, 20A, TO-252, CATHODE COMMON

0

RB088T-30NZC9

RB088T-30NZC9

ROHM Semiconductor

SUPER LOW IR, 30V, 10A, ITO-220A

997

RB228NS150TL

RB228NS150TL

ROHM Semiconductor

SUPER LOW IR, 150V, 30A, TO-263S

1000

DAP202UT106

DAP202UT106

ROHM Semiconductor

DIODE ARRAY GP 80V 100MA UMD3

3249

RF601T2D

RF601T2D

ROHM Semiconductor

DIODE ARRAY GP 200V 3A TO220FN

57

RB238T100

RB238T100

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 100V TO220F

0

RB238T150NZC9

RB238T150NZC9

ROHM Semiconductor

SUPER LOW IR, 150V, 40A, ITO-220

1000

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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