Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
RB225NS-40TL

RB225NS-40TL

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 40V LPDS

955

RBQ30T45ANZC9

RBQ30T45ANZC9

ROHM Semiconductor

RBQ30T45ANZ IS LOW IR

1000

RB098BM-30TL

RB098BM-30TL

ROHM Semiconductor

SUPER LOW IR, 30V, 6A, TO-252 (D

2500

RBR30NS40AFHTL

RBR30NS40AFHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 40V 30A LPDS

480

SCS210KE2HRC

SCS210KE2HRC

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 650V TO247

406

RBR15BM30AFHTL

RBR15BM30AFHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 30V 15A TO252

2340

RB558WMFHTL

RB558WMFHTL

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 30V EMD3F

0

RBQ20NS65ATL

RBQ20NS65ATL

ROHM Semiconductor

DIODE (RECTIFIER FRD) 65V-VRM 65

1000

RB085T-90

RB085T-90

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 90V TO220FN

374

RB238T-30NZC9

RB238T-30NZC9

ROHM Semiconductor

SUPER LOW IR, 30V, 40A, ITO-220A

1000

RBQ20BM65ATL

RBQ20BM65ATL

ROHM Semiconductor

DIODE (RECTIFIER FRD) 65V-VRM 65

0

RB238NS-60FHTL

RB238NS-60FHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 60V 40A LPDS

976

RBR15BM40ATL

RBR15BM40ATL

ROHM Semiconductor

DIODE (RECTIFIER FRD) 40V-VR 15A

2500

RBR15BGE40ATL

RBR15BGE40ATL

ROHM Semiconductor

40V, 15A, TO-252, CATHODE COMMON

0

RB218NS-30TL

RB218NS-30TL

ROHM Semiconductor

SUPER LOW IR, 30V, 20A, TO-263S

1000

RF2001NS3DFHTL

RF2001NS3DFHTL

ROHM Semiconductor

FAST RECOVERY DIODES (CORRESPOND

951

RBR20BM30AFHTL

RBR20BM30AFHTL

ROHM Semiconductor

DIODE (RECTIFIER FRD) 30V-VR 20A

2111

RB088BM-60FHTL

RB088BM-60FHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 60V 10A TO252

2475

RF1001NS2DTL

RF1001NS2DTL

ROHM Semiconductor

RF1001NS2D IS LOW VF

952

RB550EATR

RB550EATR

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 30V TSMD5

1817

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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