Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
DA228KT146

DA228KT146

ROHM Semiconductor

DIODE ARRAY GP 80V 100MA SMD3

247

RBQ15BM45AFHTL

RBQ15BM45AFHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 45V 15A TO252

1660

BAV199HMT116

BAV199HMT116

ROHM Semiconductor

BAV199HM IS HIGH RELIABILITY AND

1925

RBQ10NS45AFHTL

RBQ10NS45AFHTL

ROHM Semiconductor

DIODE (RECTIFIER FRD) 45V-VRM 45

925

RB541XNTR

RB541XNTR

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 30V UMD6

174

RBR20BM60AFHTL

RBR20BM60AFHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 60V 20A TO252

2308

IMN10T108

IMN10T108

ROHM Semiconductor

DIODE ARRAY GP 80V 100MA 6SMD

0

RBR10NS60ATL

RBR10NS60ATL

ROHM Semiconductor

RBR10NS60A IS SCHOTTKY BARRIER D

1000

RB085BGE-40TL

RB085BGE-40TL

ROHM Semiconductor

SCHOTTKY BARRIER DIODE

1951

RB225T-60

RB225T-60

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 60V TO220FN

440

RB098BM-60TL

RB098BM-60TL

ROHM Semiconductor

SUPER LOW IR, 60V, 6A, TO-252 (D

0

DAP222MFHT2L

DAP222MFHT2L

ROHM Semiconductor

DIODE SWITCHING 80V 0.3A 3-PIN

7990

RBQ15BGE65ATL

RBQ15BGE65ATL

ROHM Semiconductor

65V, 15A, TO-252, CATHODE COMMON

0

RF2001T3D

RF2001T3D

ROHM Semiconductor

DIODE ARRAY GP 300V 10A TO220FN

487

RBQ10BGE65ATL

RBQ10BGE65ATL

ROHM Semiconductor

65V, 10A, TO-252, CATHODE COMMON

0

RBR20NS30ATL

RBR20NS30ATL

ROHM Semiconductor

DIODE (RECTIFIER FRD) 30V-VR 20A

1000

RB481KFSTL

RB481KFSTL

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 30V UMD4

0

RB085BM-90TL

RB085BM-90TL

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 90V TO252

2085

RB085T-60HZC9

RB085T-60HZC9

ROHM Semiconductor

SCHOTTKY BARRIER DIODE

533

RB557WTL

RB557WTL

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 30V EMD3

2588

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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