Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
RF04UA2DTR

RF04UA2DTR

ROHM Semiconductor

DIODE ARRAY GP 200V 400MA TSMD6

2390

RB715WTL

RB715WTL

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 40V EMD3

0

RB228NS150FHTL

RB228NS150FHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 150V 30A LPDS

960

BAT54CHMT116

BAT54CHMT116

ROHM Semiconductor

BAT54CHM IS SCHOTTKY BARRIER DIO

2645

RB715ZT2L

RB715ZT2L

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 40V VMD3

1563

DA204UT106

DA204UT106

ROHM Semiconductor

DIODE ARRAY GP 20V 100MA UMD3

6413

RB088NS100FHTL

RB088NS100FHTL

ROHM Semiconductor

SCHOTTKY BARRIER DIODES (CORRESP

963

RBR20BM40ATL

RBR20BM40ATL

ROHM Semiconductor

DIODE (RECTIFIER FRD) 40V-VR 20A

2500

RF2001NS2DTL

RF2001NS2DTL

ROHM Semiconductor

DIODE ARRAY GP 200V 20A D2PAK

487

RBQ30NS100AFHTL

RBQ30NS100AFHTL

ROHM Semiconductor

LOW IR TYPE AUTOMOTIVE SCHOTTKY

0

RB205T-40

RB205T-40

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 40V TO220FN

3

RBR20NS40ATL

RBR20NS40ATL

ROHM Semiconductor

DIODE (RECTIFIER FRD) 40V-VR 20A

1000

RB238NS100TL

RB238NS100TL

ROHM Semiconductor

SUPER LOW IR, 100V, 40A, TO-263S

1000

IMN10FHT108

IMN10FHT108

ROHM Semiconductor

SWITCHING DIODES (CORRESPONDS TO

2488

RBR10BM40AFHTL

RBR10BM40AFHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 40V 10A TO252

2265

RBR10BM40ATL

RBR10BM40ATL

ROHM Semiconductor

RBR10BM40A IS LOW VF SCHOTTKEY B

2538

RBR40NS60ATL

RBR40NS60ATL

ROHM Semiconductor

RBR40NS60A IS SCHOTTKY BARRIER D

1000

RBQ20NS45ATL

RBQ20NS45ATL

ROHM Semiconductor

ROHM'S SCHOTTKY BARRIER DIODES A

990

RB706UM-40FHTL

RB706UM-40FHTL

ROHM Semiconductor

RB706UM-40FH IS THE HIGH RELIABI

4330

RB715UMTL

RB715UMTL

ROHM Semiconductor

RB715UM IS SCHOTTKY BARRIER DIOD

228

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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