Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
RB088BM150FHTL

RB088BM150FHTL

ROHM Semiconductor

SCHOTTKY BARRIER DIODE

6871

RB496EATR

RB496EATR

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 20V TSMD5

9961

RBQ20NS100AFHTL

RBQ20NS100AFHTL

ROHM Semiconductor

LOW IR TYPE AUTOMOTIVE SCHOTTKY

0

RBQ30NS65AFHTL

RBQ30NS65AFHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 65V 30A LPDS

890

RBR15BM40AFHTL

RBR15BM40AFHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 40V 15A TO252

2488

RF2001T2D

RF2001T2D

ROHM Semiconductor

DIODE ARRAY GP 200V 10A TO220FN

0

RB088BM100TL

RB088BM100TL

ROHM Semiconductor

SUPER LOW IR, 100V, 10A, TO-252

2400

UMP11NFHTN

UMP11NFHTN

ROHM Semiconductor

SWITCHING DIODES (CORRESPONDS TO

3000

RFN6BM2DTL

RFN6BM2DTL

ROHM Semiconductor

DIODE ARRAY GP 200V 3A TO252

2467

UMN20NTR

UMN20NTR

ROHM Semiconductor

DIODE ARRAY GP 80V 100MA UMD6

154

DAP202UMTL

DAP202UMTL

ROHM Semiconductor

DIODE ARRAY GP 80V 100MA UMD3F

0

RB098BM-30FHTL

RB098BM-30FHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 30V 6A TO252

2500

RB085T-90NZC9

RB085T-90NZC9

ROHM Semiconductor

SCHOTTKY BARRIER DIODE

238

RF2001NS3DTL

RF2001NS3DTL

ROHM Semiconductor

DIODE ARRAY GP 300V 20A LPDS

2469

BAT54AHMFHT116

BAT54AHMFHT116

ROHM Semiconductor

DIODE ARRAY SCHOT 30V 200MA SSD3

0

RB218NS-40FHTL

RB218NS-40FHTL

ROHM Semiconductor

DIODE ARRAY SCHOTT 40V 20A LPDS

980

RBQ10BGE45ATL

RBQ10BGE45ATL

ROHM Semiconductor

65V, 10A, TO-252, CATHODE COMMON

0

RBR20BGE60ATL

RBR20BGE60ATL

ROHM Semiconductor

60V, 20A, TO-252, CATHODE COMMON

0

RB238T100HZC9

RB238T100HZC9

ROHM Semiconductor

SCHOTTKY BARRIER DIODE (AEC-Q101

641

RBQ10T45ANZC9

RBQ10T45ANZC9

ROHM Semiconductor

RBQ10T45ANZ IS LOW IR

1000

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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