Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MDA600-20N1

MDA600-20N1

Wickmann / Littelfuse

DIODE MODULE 2KV 883A

0

HTZ180D30K

HTZ180D30K

Wickmann / Littelfuse

DIODE MODULE 30KV 1.3A

0

HTZ170C2.4K

HTZ170C2.4K

Wickmann / Littelfuse

DIODE MODULE 2.4KV 10A

0

MDD220-16N1

MDD220-16N1

Wickmann / Littelfuse

DIODE MODULE 1.6KV 270A Y2-DCB

0

HTZ250G44K

HTZ250G44K

Wickmann / Littelfuse

DIODE MODULE 44.8KV 2.7A

0

DSEI2X31-06P

DSEI2X31-06P

Wickmann / Littelfuse

DIODE MODULE 600V 30A ECO-PAC1

0

MDD220-08N1

MDD220-08N1

Wickmann / Littelfuse

DIODE MODULE 800V 270A Y2-DCB

0

HTZ130B28K

HTZ130B28K

Wickmann / Littelfuse

DIODE MODULE 28KV 1A

0

HTZ150C7K

HTZ150C7K

Wickmann / Littelfuse

DIODE MODULE 7.2KV 3A

0

HTZ240F12K

HTZ240F12K

Wickmann / Littelfuse

DIODE MODULE 12KV 1.7A

0

HTZ150C8K

HTZ150C8K

Wickmann / Littelfuse

DIODE MODULE 8.4KV 3A

0

HTZ250G33K

HTZ250G33K

Wickmann / Littelfuse

DIODE MODULE 33.6KV 2.7A

0

HTZ260G22K

HTZ260G22K

Wickmann / Littelfuse

DIODE MODULE 22.4KV 4.7A

0

MDD250-12N1

MDD250-12N1

Wickmann / Littelfuse

DIODE MODULE 1.2KV 290A Y2-DCB

0

DSA600A150NB

DSA600A150NB

Wickmann / Littelfuse

DIODE ARRAY SCHOTTKY 150V TO227

0

HTZ110A22K

HTZ110A22K

Wickmann / Littelfuse

DIODE MODULE 22KV 3.5A

0

HTZ160C14K

HTZ160C14K

Wickmann / Littelfuse

DIODE MODULE 14.4KV 1.7A

0

HTZ270H48K

HTZ270H48K

Wickmann / Littelfuse

DIODE MODULE 48KV 3.4A

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
RFQ BOM Call Skype Email
Top