Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.
| Type | Functional Features | Application Examples |
|---|---|---|
| Double Diode Arrays | Two independent diodes in a shared package, common cathode/anode configuration | Full-bridge rectifiers in SMPS |
| Quad Diode Arrays | Four diodes arranged as dual series/parallel circuits | Three-phase rectification in industrial equipment |
| High-Voltage Arrays | Rated above 600V with enhanced dielectric isolation | Power factor correction circuits |
| Low-Voltage Schottky Arrays | 30V with low forward voltage drop (0.15-0.45V) | DC-DC converters in mobile devices |
Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:
Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.
| Parameter | Description | Importance |
|---|---|---|
| Max Repetitive Reverse Voltage (VRRM) | 600V-1600V ratings determine circuit insulation level | Ensures safe operation under voltage spikes |
| Forward Current (IF(AV)) | 1A-50A average current handling capacity | Dictates power delivery capability |
| Forward Voltage Drop (VF) | 0.55V-1.1V (Si), 0.15V-0.45V (Schottky) | Impacts conduction losses and efficiency |
| Operating Junction Temperature (TJ) | -55 C to 175 C | Determines thermal stability |
| Reverse Recovery Time (trr) | 10ns-2 s | Affects switching performance |
| Manufacturer | Representative Product | Key Specifications |
|---|---|---|
| ON Semiconductor | MUR420 | 200V, 4A, 35ns recovery time |
| STMicroelectronics | STTH1R06A | 600V, 1A, 50ns |
| Infineon Technologies | IDW40G65H5 | 650V, 40A, SiC Schottky |
| Diodes Inc. | B550-13-F | 50V, 5A, 0.3V drop Schottky |
Key developments include: