Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
DGSS6-06CC

DGSS6-06CC

Wickmann / Littelfuse

DIODE ARRAY SCHOTTKY 600V 11A

0

HTZ280H32K

HTZ280H32K

Wickmann / Littelfuse

DIODE MODULE 32KV 4.7A

0

HTZ270H64K

HTZ270H64K

Wickmann / Littelfuse

DIODE MODULE 64KV 3.4A

0

MDD250-16N1

MDD250-16N1

Wickmann / Littelfuse

DIODE MODULE 1.6KV 290A Y2-DCB

0

MDD600-22N1

MDD600-22N1

Wickmann / Littelfuse

DIODE MODULE 2.2KV 883A

0

MDA950-20N1W

MDA950-20N1W

Wickmann / Littelfuse

DIODE MODULE 2KV 950A

0

DSEI2X31-10P

DSEI2X31-10P

Wickmann / Littelfuse

DIODE MODULE 1KV 30A ECO-PAC1

0

MDD950-20N1W

MDD950-20N1W

Wickmann / Littelfuse

DIODE MODULE 2KV 950A

0

HTZ240F16K

HTZ240F16K

Wickmann / Littelfuse

DIODE MODULE 16KV 1.7A

0

HTZ110A16K

HTZ110A16K

Wickmann / Littelfuse

DIODE MODULE 16KV 3.5A

0

HTZ240F10K

HTZ240F10K

Wickmann / Littelfuse

DIODE MODULE 10KV 1.7A

0

MDD710-22N2

MDD710-22N2

Wickmann / Littelfuse

DIODE MODULE 2.2KV 708A

0

HTZ260G19K

HTZ260G19K

Wickmann / Littelfuse

DIODE MODULE 19.6KV 4.7A

0

DSEI2X30-06P

DSEI2X30-06P

Wickmann / Littelfuse

DIODE MODULE 600V 30A ECO-PAC1

0

MDA600-18N1

MDA600-18N1

Wickmann / Littelfuse

DIODE MODULE 1.8KV 883A

0

MDA600-16N1

MDA600-16N1

Wickmann / Littelfuse

DIODE MODULE 1.6KV 883A

0

MDD600-18N1

MDD600-18N1

Wickmann / Littelfuse

DIODE MODULE 1.8KV 600A WC-500

0

DSEI2X30-12P

DSEI2X30-12P

Wickmann / Littelfuse

DIODE MODULE 1.2KV 28A ECO-PAC1

0

HTZ180D35K

HTZ180D35K

Wickmann / Littelfuse

DIODE MODULE 35KV 1.3A

0

HTZ170C2.8K

HTZ170C2.8K

Wickmann / Littelfuse

DIODE MODULE 2.8KV 10A

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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