Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
LFUSCD20120B

LFUSCD20120B

Wickmann / Littelfuse

DIODE SC SCHOTKY 1200V 10A TO247

0

DGSS10-060CC

DGSS10-060CC

Wickmann / Littelfuse

DIODE ARRAY SCHOTTKY 600V 25A

0

DSEC60-02AQ

DSEC60-02AQ

Wickmann / Littelfuse

DIODE ARRAY GP 200V 30A TO3P

0

DSSK28-0045A

DSSK28-0045A

Wickmann / Littelfuse

DIODE ARRAY SCHOTTKY 45V TO220AB

0

DSEC59-03AQ

DSEC59-03AQ

Wickmann / Littelfuse

DIODE ARRAY GP 300V 30A TO3P

0

DGSK32-018CS

DGSK32-018CS

Wickmann / Littelfuse

DIODE ARRAY SCHOTTKY 180V TO263

0

DSEP2X31-04A

DSEP2X31-04A

Wickmann / Littelfuse

DIODE MODULE 400V 30A SOT227B

0

DGSS10-06CC

DGSS10-06CC

Wickmann / Littelfuse

DIODE ARRAY SCHOTTKY 600V 25A

0

MCC95-08I01B

MCC95-08I01B

Wickmann / Littelfuse

DIODE MODULE 800V 116A TO240AA

0

LFUSCD30120B

LFUSCD30120B

Wickmann / Littelfuse

DIODE SC SCHOTKY 1200V 15A TO247

0

DSEE8-06CC

DSEE8-06CC

Wickmann / Littelfuse

DIODE ARRAY 600V 10A ISOPLUS220

0

DSSK20-0045A

DSSK20-0045A

Wickmann / Littelfuse

DIODE ARRAY SCHOTTKY 45V TO220AB

0

DSEP2X35-06C

DSEP2X35-06C

Wickmann / Littelfuse

DIODE MODULE 600V 35A SOT227B

0

DSSK28-01A

DSSK28-01A

Wickmann / Littelfuse

DIODE ARRAY SCHOTTKY 100V TO220

0

DSEE6-06CC

DSEE6-06CC

Wickmann / Littelfuse

DIODE ARRAY 600V 6A ISOPLUS220

0

DGSK40-025CS

DGSK40-025CS

Wickmann / Littelfuse

DIODE ARRAY SCHOTTKY 250V TO263

0

DSEE15-06CC

DSEE15-06CC

Wickmann / Littelfuse

DIODE ARRAY 600V 15A ISOPLUS220

0

DSEC30-04A

DSEC30-04A

Wickmann / Littelfuse

DIODE ARRAY GP 400V 15A TO247AD

0

DSEC60-03AR

DSEC60-03AR

Wickmann / Littelfuse

DIODE ARRAY 300V 30A ISOPLUS247

0

DSSK30-0045B

DSSK30-0045B

Wickmann / Littelfuse

DIODE ARRAY SCHOTTKY 45V TO247AD

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
RFQ BOM Call Skype Email
Top