Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MDD600-16N1

MDD600-16N1

Wickmann / Littelfuse

DIODE MODULE 1.6KV 600A WC-500

0

MDK950-12N1W

MDK950-12N1W

Wickmann / Littelfuse

DIODE MODULE 1.2KV 950A

0

MDA600-22N1

MDA600-22N1

Wickmann / Littelfuse

DIODE MODULE 2.2KV 883A

0

HTZ280H20K

HTZ280H20K

Wickmann / Littelfuse

DIODE MODULE 20KV 4.7A

0

HTZ150C9K

HTZ150C9K

Wickmann / Littelfuse

DIODE MODULE 9.6KV 3A

0

MDK600-18N1

MDK600-18N1

Wickmann / Littelfuse

DIODE MODULE 1.8KV 883A

0

HTZ280H28K

HTZ280H28K

Wickmann / Littelfuse

DIODE MODULE 28KV 4.7A

0

HTZ170C2K

HTZ170C2K

Wickmann / Littelfuse

DIODE MODULE 2KV 10A

0

MDK600-16N1

MDK600-16N1

Wickmann / Littelfuse

DIODE MODULE 1.6KV 883A

0

MDD600-20N1

MDD600-20N1

Wickmann / Littelfuse

DIODE MODULE 2KV 883A

0

MDMA200P1600SA

MDMA200P1600SA

Wickmann / Littelfuse

DIODE MODULE 1.6KV 200A

0

HTZ130B38K

HTZ130B38K

Wickmann / Littelfuse

DIODE MODULE 38KV 1A

0

HTZ160C19K

HTZ160C19K

Wickmann / Littelfuse

DIODE MODULE 19.2KV 1.7A

0

HTZ130B33K

HTZ130B33K

Wickmann / Littelfuse

DIODE MODULE 33KV 1A

0

MDD310-08N1

MDD310-08N1

Wickmann / Littelfuse

DIODE MODULE 800V 305A Y2-DCB

0

HTZ240F14K

HTZ240F14K

Wickmann / Littelfuse

DIODE MODULE 14KV 1.7A

0

MDD220-14N1

MDD220-14N1

Wickmann / Littelfuse

DIODE MODULE 1.4KV 270A Y2-DCB

0

HTZ270H56K

HTZ270H56K

Wickmann / Littelfuse

DIODE MODULE 56KV 3.4A

0

HTZ260G14K

HTZ260G14K

Wickmann / Littelfuse

DIODE MODULE 14KV 4.7A

0

HTZ150C6K

HTZ150C6K

Wickmann / Littelfuse

DIODE MODULE 6KV 3A

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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