Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
HTZ120A44K

HTZ120A44K

Wickmann / Littelfuse

DIODE MODULE 44KV 2A

0

HTZ270H40K

HTZ270H40K

Wickmann / Littelfuse

DIODE MODULE 40KV 3.4A

0

MDK600-14N1

MDK600-14N1

Wickmann / Littelfuse

DIODE MODULE 1.4KV 883A

0

HTZ110A25K

HTZ110A25K

Wickmann / Littelfuse

DIODE MODULE 25KV 3.5A

0

HTZ120A32K

HTZ120A32K

Wickmann / Littelfuse

DIODE MODULE 32KV 2A

0

HTZ160C17K

HTZ160C17K

Wickmann / Littelfuse

DIODE MODULE 16.8KV 1.7A

0

DSEI2X31-12P

DSEI2X31-12P

Wickmann / Littelfuse

DIODE MODULE 1.2KV 28A ECO-PAC1

0

HTZ180D26K

HTZ180D26K

Wickmann / Littelfuse

DIODE MODULE 26KV 1.3A

0

MDD600-12N1

MDD600-12N1

Wickmann / Littelfuse

DIODE MODULE 1.2KV 600A WC-500

0

MDD950-16N1W

MDD950-16N1W

Wickmann / Littelfuse

DIODE MODULE 1.6KV 950A

0

VGF0136AH

VGF0136AH

Wickmann / Littelfuse

DIODE MODUL RECTIFIER 1400V 1.5A

0

MDA600-12N1

MDA600-12N1

Wickmann / Littelfuse

DIODE MODULE 1.2KV 883A

0

DSEI2X121-02P

DSEI2X121-02P

Wickmann / Littelfuse

DIODE MODULE 200V 123A ECO-PAC2

0

HTZ250G28K

HTZ250G28K

Wickmann / Littelfuse

DIODE MODULE 28KV 2.7A

0

DSEI2X30-10P

DSEI2X30-10P

Wickmann / Littelfuse

DIODE MODULE 1KV 30A ECO-PAC1

0

MDA600-14N1

MDA600-14N1

Wickmann / Littelfuse

DIODE MODULE 1.4KV 883A

0

HTZ130B24K

HTZ130B24K

Wickmann / Littelfuse

DIODE RECT MOD 24000V 1A HTZ

0

MDK600-20N1

MDK600-20N1

Wickmann / Littelfuse

DIODE MODULE 2KV 883A

0

HTZ280H24K

HTZ280H24K

Wickmann / Littelfuse

DIODE MODULE 24KV 4.7A

0

HTZ120A38K

HTZ120A38K

Wickmann / Littelfuse

DIODE MODULE 38KV 2A

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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