Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MDD250-08N1

MDD250-08N1

Wickmann / Littelfuse

DIODE MODULE 800V 290A Y2-DCB

0

HTZ110A19K

HTZ110A19K

Wickmann / Littelfuse

DIODE MODULE 19KV 3.5A

0

MDA950-12N1W

MDA950-12N1W

Wickmann / Littelfuse

DIODE MODULE 1.2KV 950A

0

HTZ120A51K

HTZ120A51K

Wickmann / Littelfuse

DIODE MODULE 51KV 2A

0

MDD250-14N1

MDD250-14N1

Wickmann / Littelfuse

DIODE MODULE 1.4KV 290A Y2-DCB

0

MDD220-18N1

MDD220-18N1

Wickmann / Littelfuse

DIODE MODULE 1.8KV 270A Y2-DCB

0

HTZ160C12K

HTZ160C12K

Wickmann / Littelfuse

DIODE MODULE 12KV 1.7A

0

DSEI2X61-02P

DSEI2X61-02P

Wickmann / Littelfuse

DIODE MODULE 200V 71A ECO-PAC1

0

HTZ180D22K

HTZ180D22K

Wickmann / Littelfuse

DIODE MODULE 22KV 1.3A

0

MDK950-20N1W

MDK950-20N1W

Wickmann / Littelfuse

DIODE MODULE 2KV 950A

0

MDD220-12N1

MDD220-12N1

Wickmann / Littelfuse

DIODE MODULE 1.2KV 270A Y2-DCB

0

DSEI2X61-10P

DSEI2X61-10P

Wickmann / Littelfuse

DIODE MODULE 1KV 60A ECO-PAC1

0

MDK950-16N1W

MDK950-16N1W

Wickmann / Littelfuse

DIODE MODULE 1.6KV 950A

0

MDA950-16N1W

MDA950-16N1W

Wickmann / Littelfuse

DIODE MODULE 1.6KV 950A

0

MDD950-12N1W

MDD950-12N1W

Wickmann / Littelfuse

DIODE MODULE 1.2KV 950A

0

FSS100-008A

FSS100-008A

Wickmann / Littelfuse

DIODE ARRAY SCHOTTKY 80V ISOPLUS

0

MDK600-12N1

MDK600-12N1

Wickmann / Littelfuse

DIODE MODULE 1.2KV 883A

0

HTZ250G39K

HTZ250G39K

Wickmann / Littelfuse

DIODE MODULE 39.2KV 2.7A

0

MDK600-22N1

MDK600-22N1

Wickmann / Littelfuse

DIODE MODULE 2.2KV 883A

0

HTZ260G16K

HTZ260G16K

Wickmann / Littelfuse

DIODE MODULE 16.8KV 4.7A

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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