Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MBRT20035

MBRT20035

GeneSiC Semiconductor

DIODE MODULE 35V 200A 3TOWER

0

FST10060

FST10060

GeneSiC Semiconductor

DIODE MODULE 60V 100A TO249AB

0

MBRT60030R

MBRT60030R

GeneSiC Semiconductor

DIODE MODULE 30V 600A 3TOWER

0

MBRT30040R

MBRT30040R

GeneSiC Semiconductor

DIODE MODULE 40V 300A 3TOWER

15

MBR2X050A150

MBR2X050A150

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 50A SOT227

0

MBR2X160A120

MBR2X160A120

GeneSiC Semiconductor

DIODE SCHOTTKY 120V 160A SOT227

0

MUR2X100A06

MUR2X100A06

GeneSiC Semiconductor

DIODE GEN PURP 600V 100A SOT227

0

MBR60020CT

MBR60020CT

GeneSiC Semiconductor

DIODE MODULE 20V 300A 2TOWER

0

MURT40040

MURT40040

GeneSiC Semiconductor

DIODE MODULE 400V 400A 3TOWER

0

MBRT12045R

MBRT12045R

GeneSiC Semiconductor

DIODE MODULE 45V 120A 3TOWER

0

MBRT200100

MBRT200100

GeneSiC Semiconductor

DIODE MODULE 100V 200A 3TOWER

0

MBRT20080

MBRT20080

GeneSiC Semiconductor

DIODE MODULE 80V 200A 3TOWER

0

MBRT40020

MBRT40020

GeneSiC Semiconductor

DIODE MODULE 20V 400A 3TOWER

0

MUR2X100A04

MUR2X100A04

GeneSiC Semiconductor

DIODE GEN PURP 400V 200A SOT227

0

MBR600150CT

MBR600150CT

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 300A 2 TOWER

0

MSRTA300120(A)D

MSRTA300120(A)D

GeneSiC Semiconductor

DIODE MODULE 1.2KV 300A 3TOWER

0

MSRT150140(A)

MSRT150140(A)

GeneSiC Semiconductor

DIODE MODULE 1.4KV 150A 3TOWER

0

MSRTA400120(A)

MSRTA400120(A)

GeneSiC Semiconductor

DIODE MODULE 1.2KV 400A 3TOWER

0

MURTA500120R

MURTA500120R

GeneSiC Semiconductor

DIODE GEN 1.2KV 250A 3 TOWER

0

MBRT600150R

MBRT600150R

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 300A 3 TOWER

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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