Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MBR12020CTR

MBR12020CTR

GeneSiC Semiconductor

DIODE MODULE 20V 120A 2TOWER

0

MBRT120100R

MBRT120100R

GeneSiC Semiconductor

DIODE MODULE 100V 120A 3TOWER

0

MUR2X120A12

MUR2X120A12

GeneSiC Semiconductor

DIODE GEN PURP 1.2KV 120A SOT227

0

FST100200

FST100200

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 50A TO249AB

0

MURT10040R

MURT10040R

GeneSiC Semiconductor

DIODE ARRAY GP REV POLAR3TOWER

0

MBR2X160A200

MBR2X160A200

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 160A SOT227

0

MBR40035CTR

MBR40035CTR

GeneSiC Semiconductor

DIODE MODULE 35V 400A 2TOWER

1

MURT30010R

MURT30010R

GeneSiC Semiconductor

DIODE MODULE 100V 300A 3TOWER

0

MBR600100CTR

MBR600100CTR

GeneSiC Semiconductor

DIODE MODULE 100V 300A 2TOWER

0

MBRT300200

MBRT300200

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 150A 3 TOWER

0

MURT20020R

MURT20020R

GeneSiC Semiconductor

DIODE MODULE 200A 3TOWER

0

MUR2X120A02

MUR2X120A02

GeneSiC Semiconductor

DIODE GEN PURP 200V 120A SOT227

0

MBR60030CTR

MBR60030CTR

GeneSiC Semiconductor

DIODE MODULE 30V 300A 2TOWER

0

MBRT120100

MBRT120100

GeneSiC Semiconductor

DIODE MODULE 100V 120A 3TOWER

0

GB2X50MPS17-227

GB2X50MPS17-227

GeneSiC Semiconductor

DIODE MOD SCHOTTKY 1700V SOT227

134

MBRT20030

MBRT20030

GeneSiC Semiconductor

DIODE MODULE 30V 200A 3TOWER

0

MBRT20040R

MBRT20040R

GeneSiC Semiconductor

DIODE MODULE 40V 200A 3TOWER

0

MBR40040CT

MBR40040CT

GeneSiC Semiconductor

DIODE MODULE 40V 400A 2TOWER

0

MBR12040CTR

MBR12040CTR

GeneSiC Semiconductor

DIODE MODULE 40V 120A 2TOWER

0

MBR2X060A045

MBR2X060A045

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 120A SOT227

38

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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