Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MBRT20020R

MBRT20020R

GeneSiC Semiconductor

DIODE MODULE 20V 200A 3TOWER

0

FST16035

FST16035

GeneSiC Semiconductor

DIODE MODULE 35V 160A TO249AB

30

MBR12040CT

MBR12040CT

GeneSiC Semiconductor

DIODE MODULE 40V 120A 2TOWER

0

MBRT20040

MBRT20040

GeneSiC Semiconductor

DIODE MODULE 40V 200A 3TOWER

7

MBRT600200

MBRT600200

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 300A 3 TOWER

0

MSRT150160(A)

MSRT150160(A)

GeneSiC Semiconductor

DIODE MODULE 1.6KV 150A 3TOWER

0

MURTA30020R

MURTA30020R

GeneSiC Semiconductor

DIODE GEN PURP 200V 150A 3 TOWER

0

MURTA20060

MURTA20060

GeneSiC Semiconductor

DIODE GEN PURP 600V 100A 3 TOWER

0

MURTA40020

MURTA40020

GeneSiC Semiconductor

DIODE GEN PURP 200V 200A 3 TOWER

0

MBRT40030R

MBRT40030R

GeneSiC Semiconductor

DIODE MODULE 30V 400A 3TOWER

0

MURTA60020

MURTA60020

GeneSiC Semiconductor

DIODE MODULE 200V 600A 3TOWER

0

MBR30035CT

MBR30035CT

GeneSiC Semiconductor

DIODE MODULE 35V 200A 2TOWER

0

MBRT40020R

MBRT40020R

GeneSiC Semiconductor

DIODE MODULE 20V 400A 3TOWER

0

MSRTA300100(A)D

MSRTA300100(A)D

GeneSiC Semiconductor

DIODE MODULE 1KV 300A 3TOWER

0

MBR40040CTR

MBR40040CTR

GeneSiC Semiconductor

DIODE MODULE 40V 400A 2TOWER

17

MUR2X120A06

MUR2X120A06

GeneSiC Semiconductor

DIODE GEN PURP 600V 120A SOT227

0

MBRT60020R

MBRT60020R

GeneSiC Semiconductor

DIODE MODULE 20V 600A 3TOWER

0

FST16080

FST16080

GeneSiC Semiconductor

DIODE MODULE 80V 160A TO249AB

0

MBR2X100A200

MBR2X100A200

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 100A SOT227

0

MBR2X160A180

MBR2X160A180

GeneSiC Semiconductor

DIODE SCHOTTKY 180V 160A SOT227

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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