Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MBR2X050A080

MBR2X050A080

GeneSiC Semiconductor

DIODE SCHOTTKY 80V 50A SOT227

0

MBR30020CTR

MBR30020CTR

GeneSiC Semiconductor

DIODE MODULE 20V 300A 2TOWER

0

MURT30060R

MURT30060R

GeneSiC Semiconductor

DIODE MODULE 600V 300A 3TOWER

0

MBR2X100A100

MBR2X100A100

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 100A SOT227

0

MBR2X160A150

MBR2X160A150

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 160A SOT227

0

MURT20060R

MURT20060R

GeneSiC Semiconductor

DIODE MODULE 600V 200A 3TOWER

0

MSRTA6001R

MSRTA6001R

GeneSiC Semiconductor

DIODE MODULE 1.6KV 600A 3TOWER

0

MBR30035CTR

MBR30035CTR

GeneSiC Semiconductor

DIODE MODULE 35V 300A 2TOWER

21

GC2X10MPS12-247

GC2X10MPS12-247

GeneSiC Semiconductor

SIC DIODE 1200V 20A TO-247-3

200

MUR2X030A04

MUR2X030A04

GeneSiC Semiconductor

DIODE GEN PURP 400V 30A SOT227

0

MSRT25060(A)

MSRT25060(A)

GeneSiC Semiconductor

DIODE MODULE 600V 250A 3TOWER

0

MBRT12040R

MBRT12040R

GeneSiC Semiconductor

DIODE MODULE 40V 120A 3TOWER

0

MURTA40060

MURTA40060

GeneSiC Semiconductor

DIODE GEN PURP 600V 200A 3 TOWER

0

FST160200

FST160200

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 80A TO249AB

0

MBRT60040

MBRT60040

GeneSiC Semiconductor

DIODE MODULE 40V 600A 3TOWER

0

MBRT60020

MBRT60020

GeneSiC Semiconductor

DIODE MODULE 20V 600A 3TOWER

0

MUR20010CTR

MUR20010CTR

GeneSiC Semiconductor

DIODE MODULE 100V 200A 2TOWER

0

MURTA500120

MURTA500120

GeneSiC Semiconductor

DIODE GEN 1.2KV 250A 3 TOWER

0

MBR60060CT

MBR60060CT

GeneSiC Semiconductor

DIODE MODULE 60V 300A 2TOWER

0

MSRTA40060(A)

MSRTA40060(A)

GeneSiC Semiconductor

DIODE MODULE 600V 400A 3TOWER

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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