Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MBRT40040

MBRT40040

GeneSiC Semiconductor

DIODE MODULE 40V 400A 3TOWER

0

MSRTA200120(A)D

MSRTA200120(A)D

GeneSiC Semiconductor

DIODE GEN 1.2KV 200A 3 TOWER

0

MURTA400120

MURTA400120

GeneSiC Semiconductor

DIODE GEN 1.2KV 200A 3 TOWER

0

MBR12035CT

MBR12035CT

GeneSiC Semiconductor

DIODE MODULE 35V 120A 2TOWER

0

MBR2X050A120

MBR2X050A120

GeneSiC Semiconductor

DIODE SCHOTTKY 120V 50A SOT227

0

MURT40010

MURT40010

GeneSiC Semiconductor

DIODE MODULE 100V 400A 3TOWER

0

MBRT30040

MBRT30040

GeneSiC Semiconductor

DIODE MODULE 40V 300A 3TOWER

0

MURTA30040

MURTA30040

GeneSiC Semiconductor

DIODE GEN PURP 400V 150A 3 TOWER

0

MSRT20060(A)

MSRT20060(A)

GeneSiC Semiconductor

DIODE MODULE 600V 200A 3TOWER

0

GC2X15MPS12-247

GC2X15MPS12-247

GeneSiC Semiconductor

SIC DIODE 1200V 30A TO-247-3

168

MUR2X120A10

MUR2X120A10

GeneSiC Semiconductor

DIODE GEN PURP 1KV 120A SOT227

0

MBR2X080A100

MBR2X080A100

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 160A SOT227

36

MBRT60035

MBRT60035

GeneSiC Semiconductor

DIODE MODULE 35V 600A 3TOWER

0

MSRTA60080(A)

MSRTA60080(A)

GeneSiC Semiconductor

DIODE MODULE 800V 600A 3TOWER

0

MBR60020CTR

MBR60020CTR

GeneSiC Semiconductor

DIODE MODULE 20V 300A 2TOWER

0

MUR2X060A12

MUR2X060A12

GeneSiC Semiconductor

DIODE GEN PURP 1.2KV 60A SOT227

0

MSRT15080(A)

MSRT15080(A)

GeneSiC Semiconductor

DIODE MODULE 800V 150A 3TOWER

0

FST10045

FST10045

GeneSiC Semiconductor

DIODE MODULE 45V 100A TO249AB

0

MBRT60080

MBRT60080

GeneSiC Semiconductor

DIODE MODULE 80V 600A 3TOWER

0

MBR30020CT

MBR30020CT

GeneSiC Semiconductor

DIODE MODULE 20V 300A 2TOWER

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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