Diodes - Rectifiers

Diodes - Rectifiers - Arrays

Image	Part Number	Description / PDF	Quantity	Rfq
	MURTA60060 GeneSiC Semiconductor	DIODE MODULE 600V 600A 3TOWER	0
	FST10030 GeneSiC Semiconductor	DIODE MODULE 30V 100A TO249AB	0
	MSRTA200100(A)D GeneSiC Semiconductor	DIODE GEN 1KV 200A 3 TOWER	0
	MBR2X080A080 GeneSiC Semiconductor	DIODE SCHOTTKY 80V 80A SOT227	0
	MURTA60060R GeneSiC Semiconductor	DIODE MODULE 600V 600A 3TOWER	0
	MURT30010 GeneSiC Semiconductor	DIODE MODULE 100V 300A 3TOWER	0
	MBR2X050A060 GeneSiC Semiconductor	DIODE SCHOTTKY 60V 50A SOT227	0
	MSRT150100(A) GeneSiC Semiconductor	DIODE MODULE 1KV 150A 3TOWER	0
	MBR2X060A150 GeneSiC Semiconductor	DIODE SCHOTTKY 150V 60A SOT227	0
	MBRT60035R GeneSiC Semiconductor	DIODE MODULE 35V 600A 3TOWER	0
	MSRT150120(A) GeneSiC Semiconductor	DIODE MODULE 1.2KV 150A 3TOWER	0
	MURTA20060R GeneSiC Semiconductor	DIODE GEN PURP 600V 100A 3 TOWER	0
	MSRTA400100(A) GeneSiC Semiconductor	DIODE MODULE 1KV 400A 3TOWER	0
	MURTA600120R GeneSiC Semiconductor	DIODE GEN 1.2KV 300A 3 TOWER	0
	GE2X10MPS06D GeneSiC Semiconductor	650V 20A TO-247-3 SIC SCHOTTKY M	0
	MBR20030CT GeneSiC Semiconductor	DIODE MODULE 30V 200A 2TOWER	0
	MSRT150140(A)D GeneSiC Semiconductor	DIODE GEN 1.4KV 150A 3 TOWER	0
	MSRT200140(A)D GeneSiC Semiconductor	DIODE GEN 1.4KV 200A 3 TOWER	0
	MBR200100CTS GeneSiC Semiconductor	DIODE MODULE 100V 200A SOT227	0
	MBR120100CTR GeneSiC Semiconductor	DIODE MODULE 100V 120A 2TOWER	0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Double Diode Arrays	Two independent diodes in a shared package, common cathode/anode configuration	Full-bridge rectifiers in SMPS
Quad Diode Arrays	Four diodes arranged as dual series/parallel circuits	Three-phase rectification in industrial equipment
High-Voltage Arrays	Rated above 600V with enhanced dielectric isolation	Power factor correction circuits
Low-Voltage Schottky Arrays	30V with low forward voltage drop (0.15-0.45V)	DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

TO-220/TO-247 for high-power applications
SOIC/SOT-23 for surface-mount designs
Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

Parameter	Description	Importance
Max Repetitive Reverse Voltage (V_RRM)	600V-1600V ratings determine circuit insulation level	Ensures safe operation under voltage spikes
Forward Current (I_F(AV))	1A-50A average current handling capacity	Dictates power delivery capability
Forward Voltage Drop (V_F)	0.55V-1.1V (Si), 0.15V-0.45V (Schottky)	Impacts conduction losses and efficiency
Operating Junction Temperature (T_J)	-55 C to 175 C	Determines thermal stability
Reverse Recovery Time (t_rr)	10ns-2 s	Affects switching performance

5. Application Areas

Power Supplies: Switch-mode power supplies (SMPS), battery chargers
Automotive: Alternator rectification, onboard chargers
Industrial: Motor drives, welding inverters
Renewables: Solar micro-inverters, wind turbine converters
Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
ON Semiconductor	MUR420	200V, 4A, 35ns recovery time
STMicroelectronics	STTH1R06A	600V, 1A, 50ns
Infineon Technologies	IDW40G65H5	650V, 40A, SiC Schottky
Diodes Inc.	B550-13-F	50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

Calculate required V_RRM with 20% safety margin
Verify I_F(AV) against RMS current values
Select package based on thermal dissipation needs
Consider SiC/GaN alternatives for high-frequency designs
Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
Miniaturization through chip-scale packaging
Integrated protection features (TVS + rectifier arrays)
Automotive-grade devices for 800V EV systems
AI-driven failure prediction models in manufacturing