Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MURTA30040R

MURTA30040R

GeneSiC Semiconductor

DIODE GEN PURP 400V 150A 3 TOWER

0

MSRT10060(A)D

MSRT10060(A)D

GeneSiC Semiconductor

DIODE GEN PURP 600V 100A 3 TOWER

0

GC2X100MPS06-227

GC2X100MPS06-227

GeneSiC Semiconductor

DIODE MOD SCHOT 650V 209A SOT227

0

MBRT20060R

MBRT20060R

GeneSiC Semiconductor

DIODE MODULE 60V 200A 3TOWER

0

MBRT12035

MBRT12035

GeneSiC Semiconductor

DIODE MODULE 35V 120A 3TOWER

0

MURTA20040R

MURTA20040R

GeneSiC Semiconductor

DIODE GEN PURP 400V 100A 3 TOWER

0

MBR2X120A150

MBR2X120A150

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 120A SOT227

0

MURTA30060R

MURTA30060R

GeneSiC Semiconductor

DIODE GEN PURP 600V 150A 3 TOWER

0

MSRT20060(A)D

MSRT20060(A)D

GeneSiC Semiconductor

DIODE GEN PURP 600V 200A 3 TOWER

0

MSRTA600100(A)

MSRTA600100(A)

GeneSiC Semiconductor

DIODE MODULE 1KV 600A 3TOWER

0

FST16040

FST16040

GeneSiC Semiconductor

DIODE MODULE 40V 160A TO249AB

0

MSRT150120(A)D

MSRT150120(A)D

GeneSiC Semiconductor

DIODE GEN 1.2KV 150A 3 TOWER

0

MBRT200200R

MBRT200200R

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 100A 3 TOWER

0

MBRT400100

MBRT400100

GeneSiC Semiconductor

DIODE MODULE 100V 400A 3TOWER

9

MBR2X080A200

MBR2X080A200

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 80A SOT227

0

FST10020

FST10020

GeneSiC Semiconductor

DIODE MODULE 20V 100A TO249AB

0

MBRT30030

MBRT30030

GeneSiC Semiconductor

DIODE MODULE 30V 300A 3TOWER

0

MBR60030CT

MBR60030CT

GeneSiC Semiconductor

DIODE MODULE 30V 300A 2TOWER

0

MBRT60060

MBRT60060

GeneSiC Semiconductor

DIODE MODULE 60V 600A 3TOWER

0

MSRTA30080(A)

MSRTA30080(A)

GeneSiC Semiconductor

DIODE MODULE 800V 300A 3TOWER

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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