Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MUR2X060A04

MUR2X060A04

GeneSiC Semiconductor

DIODE GEN PURP 400V 120A SOT227

38

MURTA40040R

MURTA40040R

GeneSiC Semiconductor

DIODE GEN PURP 400V 200A 3 TOWER

0

GE2X8MPS06D

GE2X8MPS06D

GeneSiC Semiconductor

650V 16A TO-247-3 SIC SCHOTTKY M

0

MURTA50040R

MURTA50040R

GeneSiC Semiconductor

DIODE MODULE 400V 500A 3TOWER

0

GC2X50MPS06-227

GC2X50MPS06-227

GeneSiC Semiconductor

DIODE MOD SCHOT 650V 104A SOT227

38

MBR2X080A180

MBR2X080A180

GeneSiC Semiconductor

DIODE SCHOTTKY 180V 80A SOT227

0

MURT10040

MURT10040

GeneSiC Semiconductor

DIODE ARRAY GP 400V 100A 3TOWER

0

MURT20060

MURT20060

GeneSiC Semiconductor

DIODE MODULE 600V 200A 3TOWER

0

MBR60040CT

MBR60040CT

GeneSiC Semiconductor

DIODE MODULE 40V 300A 2TOWER

0

MUR2X100A12

MUR2X100A12

GeneSiC Semiconductor

DIODE GEN PURP 1.2KV 100A SOT227

0

MBR2X050A100

MBR2X050A100

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 50A SOT227

0

MURT30040R

MURT30040R

GeneSiC Semiconductor

DIODE MODULE 400V 300A 3TOWER

0

MSRT200120(A)

MSRT200120(A)

GeneSiC Semiconductor

DIODE MODULE 1.2KV 200A 3TOWER

0

MBRT40045

MBRT40045

GeneSiC Semiconductor

DIODE MODULE 45V 400A 3TOWER

6

MURTA200120R

MURTA200120R

GeneSiC Semiconductor

DIODE GEN 1.2KV 100A 3 TOWER

0

MBR600150CTR

MBR600150CTR

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 300A 2 TOWER

0

MBRT200150

MBRT200150

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 100A 3 TOWER

0

MSRT100160(A)D

MSRT100160(A)D

GeneSiC Semiconductor

DIODE GEN 1.6KV 100A 3 TOWER

0

MBRT200150R

MBRT200150R

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 100A 3 TOWER

0

MURT30020R

MURT30020R

GeneSiC Semiconductor

DIODE MODULE 200V 300A 3TOWER

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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