Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MBRT500100R

MBRT500100R

GeneSiC Semiconductor

DIODE MODULE 100V 500A 3TOWER

0

MBRF400200

MBRF400200

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 200A TO244AB

0

MBRT50080

MBRT50080

GeneSiC Semiconductor

DIODE MODULE 80V 500A 3TOWER

0

MBRF600200R

MBRF600200R

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 300A TO244AB

0

MBRF30035R

MBRF30035R

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 150A TO244AB

0

MURT10005R

MURT10005R

GeneSiC Semiconductor

DIODE MODULE 50V 100A 3TOWER

0

MBRF50035R

MBRF50035R

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 250A TO244AB

0

MURF10040

MURF10040

GeneSiC Semiconductor

DIODE MODULE 400V 100A TO244AB

0

MBRT30020L

MBRT30020L

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 150A 3 TOWER

0

FST8360M

FST8360M

GeneSiC Semiconductor

DIODE MODULE 60V 80A D61-3M

0

MBRF200200R

MBRF200200R

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 100A TO244AB

0

MBRF40060R

MBRF40060R

GeneSiC Semiconductor

DIODE SCHOTTKY 60V 200A TO244AB

0

MBR30035CTL

MBR30035CTL

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 150A 2 TOWER

0

MBR50060CTR

MBR50060CTR

GeneSiC Semiconductor

DIODE MODULE 600V 500A 2TOWER

0

MBRTA50045R

MBRTA50045R

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 250A 3TOWER

0

MBRF20080

MBRF20080

GeneSiC Semiconductor

DIODE SCHOTTKY 80V 100A TO244AB

0

MBRT30020RL

MBRT30020RL

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 150A 3 TOWER

0

FST8345M

FST8345M

GeneSiC Semiconductor

DIODE MODULE 45V 80A D61-3M

0

MBRTA50060R

MBRTA50060R

GeneSiC Semiconductor

DIODE SCHOTTKY 60V 250A 3TOWER

0

MURT40060

MURT40060

GeneSiC Semiconductor

DIODE MODULE 600V 400A 3TOWER

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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