Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MBRTA500200R

MBRTA500200R

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 250A 3TOWER

0

MBRTA60035RL

MBRTA60035RL

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 300A 3TOWER

0

MBRTA60040R

MBRTA60040R

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 300A 3TOWER

0

MBRF60080R

MBRF60080R

GeneSiC Semiconductor

DIODE SCHOTTKY 80V 300A TO244AB

0

MBRF20080R

MBRF20080R

GeneSiC Semiconductor

DIODE SCHOTTKY 80V 100A TO244AB

0

FST7380M

FST7380M

GeneSiC Semiconductor

DIODE SCHOTTKY 80V 35A D61-3M

0

MUR2X030A12

MUR2X030A12

GeneSiC Semiconductor

DIODE GEN PURP 1200V 60A SOT227

0

MBRTA600150R

MBRTA600150R

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 300A 3TOWER

0

MBRT40040L

MBRT40040L

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 200A 3 TOWER

0

MBRF30030

MBRF30030

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 150A TO244AB

0

MBRF20060R

MBRF20060R

GeneSiC Semiconductor

DIODE SCHOTTKY 60V 100A TO244AB

0

MURF10060R

MURF10060R

GeneSiC Semiconductor

DIODE MODULE 600V 100A TO244AB

0

MBRF50080R

MBRF50080R

GeneSiC Semiconductor

DIODE SCHOTTKY 80V 250A TO244AB

0

MBRTA40030L

MBRTA40030L

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 200A 3TOWER

0

MBRTA60060R

MBRTA60060R

GeneSiC Semiconductor

DIODE SCHOTTKY 60V 300A 3TOWER

0

FST7340M

FST7340M

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 35A D61-3M

0

MBRTA60030

MBRTA60030

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 300A 3TOWER

0

UFT10040

UFT10040

GeneSiC Semiconductor

DIODE GEN PURP 400V 50A TO249AB

0

MBRF500150

MBRF500150

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 250A TO244AB

0

FST6360M

FST6360M

GeneSiC Semiconductor

DIODE SCHOTTKY 60V 30A D61-3M

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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