Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MBRF30040R

MBRF30040R

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 150A TO244AB

0

MBRTA80040R

MBRTA80040R

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 400A 3TOWER

0

MURT20005R

MURT20005R

GeneSiC Semiconductor

DIODE MODULE 50V 200A 3TOWER

0

MBR120200CTR

MBR120200CTR

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 60A 2 TOWER

0

MBRT500150R

MBRT500150R

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 250A 3 TOWER

0

MBRF12030R

MBRF12030R

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 60A TO244AB

0

MBRF30020

MBRF30020

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 150A TO244AB

0

MBRF40045R

MBRF40045R

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 200A TO244AB

0

MBRTA50030R

MBRTA50030R

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 250A 3TOWER

0

MBR500150CTR

MBR500150CTR

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 250A 2 TOWER

0

MURF20040

MURF20040

GeneSiC Semiconductor

DIODE MODULE 400V 200A TO244AB

0

MBR30030CTL

MBR30030CTL

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 150A 2 TOWER

0

MBRTA40035L

MBRTA40035L

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 200A 3TOWER

0

UFT14005

UFT14005

GeneSiC Semiconductor

DIODE GEN PURP 50V 70A TO249AB

0

MBRF50030

MBRF50030

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 250A TO244AB

0

MBRF40045

MBRF40045

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 200A TO244AB

0

MBR60040CTL

MBR60040CTL

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 300A 2 TOWER

0

MURT40060R

MURT40060R

GeneSiC Semiconductor

DIODE MODULE 600V 400A 3TOWER

0

MBRF500150R

MBRF500150R

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 250A TO244AB

0

MBR30035CTRL

MBR30035CTRL

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 150A 2 TOWER

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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