Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MBRTA60020L

MBRTA60020L

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 300A 3TOWER

0

MBRF20030

MBRF20030

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 100A TO244AB

0

MBR40040CTL

MBR40040CTL

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 200A 2 TOWER

0

MBRT50035R

MBRT50035R

GeneSiC Semiconductor

DIODE MODULE 35V 500A 3TOWER

0

MBRTA40020RL

MBRTA40020RL

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 200A 3TOWER

0

MBRF20040R

MBRF20040R

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 100A TO244AB

0

MBRT50045R

MBRT50045R

GeneSiC Semiconductor

DIODE MODULE 45V 500A 3TOWER

0

MBR500150CT

MBR500150CT

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 250A 2 TOWER

0

MBR50035CT

MBR50035CT

GeneSiC Semiconductor

DIODE MODULE 35V 500A 2TOWER

0

FST8330M

FST8330M

GeneSiC Semiconductor

DIODE MODULE 30V 80A D61-3M

0

MBR120150CT

MBR120150CT

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 60A 2 TOWER

0

MBRT40020RL

MBRT40020RL

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 200A 3 TOWER

0

MBR120200CT

MBR120200CT

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 60A 2 TOWER

0

MBR50020CTR

MBR50020CTR

GeneSiC Semiconductor

DIODE MODULE 20V 500A 2TOWER

0

MBRF200100R

MBRF200100R

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 60A TO244AB

0

MBRF400150

MBRF400150

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 200A TO244AB

0

MBRT40020L

MBRT40020L

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 200A 3 TOWER

0

MBRF40040

MBRF40040

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 200A TO244AB

0

MBRT60020L

MBRT60020L

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 300A 3 TOWER

0

FST6315M

FST6315M

GeneSiC Semiconductor

DIODE SCHOTTKY 15V 30A D61-3M

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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