Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MBR300150CT

MBR300150CT

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 150A 2 TOWER

0

MBR200200CTR

MBR200200CTR

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 100A 2 TOWER

0

MBR20040CT

MBR20040CT

GeneSiC Semiconductor

DIODE MODULE 40V 200A 2TOWER

0

MBR300200CT

MBR300200CT

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 150A 2 TOWER

0

MBR30040CT

MBR30040CT

GeneSiC Semiconductor

DIODE MODULE 40V 300A 2TOWER

0

MBR30080CT

MBR30080CT

GeneSiC Semiconductor

DIODE MODULE 80V 300A 2TOWER

0

MBR12080CT

MBR12080CT

GeneSiC Semiconductor

DIODE MODULE 80V 120A 2TOWER

0

MBR20045CTR

MBR20045CTR

GeneSiC Semiconductor

DIODE MODULE 45V 200A 2TOWER

0

MUR30020CT

MUR30020CT

GeneSiC Semiconductor

DIODE MODULE 200V 300A 2TOWER

0

MBR20080CTR

MBR20080CTR

GeneSiC Semiconductor

DIODE MODULE 80V 200A 2TOWER

0

MUR20060CTR

MUR20060CTR

GeneSiC Semiconductor

DIODE MODULE 600V 200A 2TOWER

0

MUR30010CTR

MUR30010CTR

GeneSiC Semiconductor

DIODE MODULE 100V 300A 2TOWER

0

GD2X30MPS12N

GD2X30MPS12N

GeneSiC Semiconductor

1200V 60A SOT-227 SIC SCHOTTKY M

0

MBR12035CTR

MBR12035CTR

GeneSiC Semiconductor

DIODE MODULE 35V 120A 2TOWER

0

MBR300100CTR

MBR300100CTR

GeneSiC Semiconductor

DIODE MODULE 100V 300A 2TOWER

0

MBRF12020

MBRF12020

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 60A TO244AB

0

MBRTA80035R

MBRTA80035R

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 400A 3TOWER

0

MBRTA50080R

MBRTA50080R

GeneSiC Semiconductor

DIODE SCHOTTKY 80V 250A 3TOWER

0

MBRTA80030L

MBRTA80030L

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 400A 3TOWER

0

MBRF300200R

MBRF300200R

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 150A TO244AB

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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