Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MUR40010CTR

MUR40010CTR

GeneSiC Semiconductor

DIODE MODULE 100V 400A 2TOWER

0

MBR200150CT

MBR200150CT

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 100A 2 TOWER

0

MUR40060CT

MUR40060CT

GeneSiC Semiconductor

DIODE MODULE 600V 400A 2TOWER

0

MUR40010CT

MUR40010CT

GeneSiC Semiconductor

DIODE MODULE 100V 400A 2TOWER

0

MUR40060CTR

MUR40060CTR

GeneSiC Semiconductor

DIODE MODULE 600V 400A 2TOWER

0

GD2X30MPS06N

GD2X30MPS06N

GeneSiC Semiconductor

650V 60A SOT-227 SIC SCHOTTKY MP

0

MBR30045CTR

MBR30045CTR

GeneSiC Semiconductor

DIODE MODULE 45V 300A 2TOWER

0

MBR20060CTR

MBR20060CTR

GeneSiC Semiconductor

DIODE MODULE 60V 200A 2TOWER

0

MUR30060CTR

MUR30060CTR

GeneSiC Semiconductor

DIODE MODULE 600V 300A 2TOWER

0

MUR40040CT

MUR40040CT

GeneSiC Semiconductor

DIODE MODULE 400V 400A 2TOWER

0

MBR12080CTR

MBR12080CTR

GeneSiC Semiconductor

DIODE MODULE 80V 120A 2TOWER

0

MUR40040CTR

MUR40040CTR

GeneSiC Semiconductor

DIODE MODULE 400V 400A 2TOWER

0

MUR10010CTR

MUR10010CTR

GeneSiC Semiconductor

DIODE MODULE 100V 100A 2TOWER

0

MUR10040CTR

MUR10040CTR

GeneSiC Semiconductor

DIODE MODULE 400V 100A 2TOWER

0

MUR30060CT

MUR30060CT

GeneSiC Semiconductor

DIODE MODULE 600V 300A 2TOWER

0

MBR300150CTR

MBR300150CTR

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 150A 2 TOWER

0

MUR10010CT

MUR10010CT

GeneSiC Semiconductor

DIODE MODULE 100V 100A 2TOWER

0

MBR20060CT

MBR20060CT

GeneSiC Semiconductor

DIODE MODULE 60V 200A 2TOWER

0

MBR20020CT

MBR20020CT

GeneSiC Semiconductor

DIODE MODULE 20V 200A 2TOWER

0

MUR20040CTR

MUR20040CTR

GeneSiC Semiconductor

DIODE MODULE 400V 200A 2TOWER

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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