Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MBR2X030A100

MBR2X030A100

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 60A SOT227

26

MBR20030CTR

MBR20030CTR

GeneSiC Semiconductor

DIODE MODULE 30V 200A 2TOWER

0

MBR2X080A120

MBR2X080A120

GeneSiC Semiconductor

DIODE SCHOTTKY 120V 80A SOT227

0

MBRT600150

MBRT600150

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 300A 3 TOWER

0

MSRT200140(A)

MSRT200140(A)

GeneSiC Semiconductor

DIODE MODULE 1.4KV 200A 3TOWER

0

MBRT300100

MBRT300100

GeneSiC Semiconductor

DIODE MODULE 100V 300A 3TOWER

0

MSRT20080(A)D

MSRT20080(A)D

GeneSiC Semiconductor

DIODE GEN PURP 800V 200A 3 TOWER

0

MURTA30020

MURTA30020

GeneSiC Semiconductor

DIODE GEN PURP 200V 150A 3 TOWER

0

MBR2X050A200

MBR2X050A200

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 100A SOT227

29

MBR30030CTR

MBR30030CTR

GeneSiC Semiconductor

DIODE MODULE 30V 300A 2TOWER

0

MUR20020CTR

MUR20020CTR

GeneSiC Semiconductor

DIODE MODULE 200V 200A 2TOWER

0

MUR20040CT

MUR20040CT

GeneSiC Semiconductor

DIODE MODULE 400V 200A 2TOWER

0

MUR40020CTR

MUR40020CTR

GeneSiC Semiconductor

DIODE MODULE 200V 400A 2TOWER

0

MBR200200CT

MBR200200CT

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 100A 2 TOWER

0

MBR20035CT

MBR20035CT

GeneSiC Semiconductor

DIODE MODULE 35V 200A 2TOWER

0

MBR300200CTR

MBR300200CTR

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 150A 2 TOWER

0

MBR20080CT

MBR20080CT

GeneSiC Semiconductor

DIODE MODULE 80V 200A 2TOWER

0

GD2X75MPS17N

GD2X75MPS17N

GeneSiC Semiconductor

1700V 150A SOT-227 SIC SCHOTTKY

0

MUR30020CTR

MUR30020CTR

GeneSiC Semiconductor

DIODE MODULE 200V 300A 2TOWER

0

MUR10020CT

MUR10020CT

GeneSiC Semiconductor

DIODE MODULE 200V 100A 2TOWER

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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