Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MBRT40035L

MBRT40035L

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 200A 3 TOWER

0

MBRF300150R

MBRF300150R

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 150A TO244AB

0

FST83100M

FST83100M

GeneSiC Semiconductor

DIODE MODULE 100V 80A D61-3M

0

MBRF50045R

MBRF50045R

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 250A TO244AB

0

MBRF120150

MBRF120150

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 60A TO244AB

0

MBRF30060R

MBRF30060R

GeneSiC Semiconductor

DIODE SCHOTTKY 60V 150A TO244AB

0

MBRTA800200

MBRTA800200

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 400A 3TOWER

0

GB20SLT12-247D

GB20SLT12-247D

GeneSiC Semiconductor

DIODE SCHOTTKY 1.2KV 25A TO247D

0

MBRF50040R

MBRF50040R

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 250A TO244AB

0

FST6340M

FST6340M

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 30A D61-3M

0

MBRTA50045

MBRTA50045

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 250A 3TOWER

0

MBRF200200

MBRF200200

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 100A TO244AB

0

MBRT40030L

MBRT40030L

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 200A 3 TOWER

0

MBRTA60045R

MBRTA60045R

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 300A 3TOWER

0

FST16020L

FST16020L

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 80A TO249AB

0

MBRF12080

MBRF12080

GeneSiC Semiconductor

DIODE SCHOTTKY 80V 60A TO244AB

0

MBRF20030R

MBRF20030R

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 100A TO244AB

0

MBRT60030RL

MBRT60030RL

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 300A 3 TOWER

0

MBRF50020R

MBRF50020R

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 250A TO244AB

0

MBRF20020

MBRF20020

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 100A TO244AB

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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