Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
FST8380M

FST8380M

GeneSiC Semiconductor

DIODE MODULE 80V 80A D61-3M

0

MBRTA40040RL

MBRTA40040RL

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 200A 3TOWER

0

MBRT40045RL

MBRT40045RL

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 200A 3 TOWER

0

MBRF500200

MBRF500200

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 250A TO244AB

0

MBR50035CTR

MBR50035CTR

GeneSiC Semiconductor

DIODE MODULE 35V 500A 2TOWER

0

MBRF300150

MBRF300150

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 150A TO244AB

0

MBRF200150R

MBRF200150R

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 100A TO244AB

0

MBRTA60030R

MBRTA60030R

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 300A 3TOWER

0

MBRTA500150R

MBRTA500150R

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 250A 3TOWER

0

MBRT30045RL

MBRT30045RL

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 150A 3 TOWER

0

MBR40020CTRL

MBR40020CTRL

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 200A 2 TOWER

0

MBR40045CTRL

MBR40045CTRL

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 200A 2 TOWER

0

MBRF50060R

MBRF50060R

GeneSiC Semiconductor

DIODE SCHOTTKY 60V 250A TO244AB

0

MBRT50080R

MBRT50080R

GeneSiC Semiconductor

DIODE MODULE 80V 500A 3TOWER

0

MBRF60045

MBRF60045

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 300A TO244AB

0

MBR60045CTL

MBR60045CTL

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 300A 2 TOWER

0

MBRF50040

MBRF50040

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 250A TO244AB

0

MBR500200CT

MBR500200CT

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 250A 2 TOWER

0

MBR120150CTR

MBR120150CTR

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 60A 2 TOWER

0

MBRF12060

MBRF12060

GeneSiC Semiconductor

DIODE SCHOTTKY 60V 60A TO244AB

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
RFQ BOM Call Skype Email
Top