Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MBRF20060

MBRF20060

GeneSiC Semiconductor

DIODE SCHOTTKY 60V 100A TO244AB

0

MBRF60035R

MBRF60035R

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 300A TO244AB

0

MBRF12020R

MBRF12020R

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 60A TO244AB

0

MBRF20020R

MBRF20020R

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 100A TO244AB

0

MBR40020CTL

MBR40020CTL

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 200A 2 TOWER

0

MBRTA50035R

MBRTA50035R

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 250A 3TOWER

0

MBRT30035L

MBRT30035L

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 150A 3 TOWER

0

MBR60040CTRL

MBR60040CTRL

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 300A 2 TOWER

0

MURF10040R

MURF10040R

GeneSiC Semiconductor

DIODE MODULE 400V 100A TO244AB

0

MBRT60040RL

MBRT60040RL

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 300A 3 TOWER

0

MBRF12045R

MBRF12045R

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 60A TO244AB

0

MBRF20045R

MBRF20045R

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 100A TO244AB

0

MBRF30045R

MBRF30045R

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 150A TO244AB

0

MBRF50080

MBRF50080

GeneSiC Semiconductor

DIODE SCHOTTKY 80V 250A TO244AB

0

MBR60020CTL

MBR60020CTL

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 300A 2 TOWER

0

MBRTA600150

MBRTA600150

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 300A 3TOWER

0

UFT14010

UFT14010

GeneSiC Semiconductor

DIODE GEN PURP 100V 70A TO249AB

0

MBRT30030L

MBRT30030L

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 150A 3 TOWER

0

MBRTA50020

MBRTA50020

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 250A 3TOWER

0

MBRTA60040

MBRTA60040

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 300A 3TOWER

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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