Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MBRF600100

MBRF600100

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 250A TO244AB

0

MBR50040CTR

MBR50040CTR

GeneSiC Semiconductor

DIODE MODULE 40V 500A 2TOWER

0

MBRF300100

MBRF300100

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 150A TO244AB

0

MBRTA80020RL

MBRTA80020RL

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 400A 3TOWER

0

MBRF400150R

MBRF400150R

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 200A TO244AB

0

MBRTA60045L

MBRTA60045L

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 300A 3TOWER

0

MBRT50040R

MBRT50040R

GeneSiC Semiconductor

DIODE MODULE 40V 500A 3TOWER

0

MBRF60060

MBRF60060

GeneSiC Semiconductor

DIODE SCHOTTKY 60V 300A TO244AB

0

MBRTA50040

MBRTA50040

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 250A 3TOWER

0

MBRTA600100

MBRTA600100

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 300A 3TOWER

0

GB10SLT12-247D

GB10SLT12-247D

GeneSiC Semiconductor

DIODE SCHOTTKY 1.2KV 12A TO247D

0

UFT14060

UFT14060

GeneSiC Semiconductor

DIODE GEN PURP 600V 70A TO249AB

0

MBRF120150R

MBRF120150R

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 60A TO244AB

0

MBRT30030RL

MBRT30030RL

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 150A 3 TOWER

0

MBRF600200

MBRF600200

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 300A TO244AB

0

MBRTA40035RL

MBRTA40035RL

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 200A 3TOWER

0

FST7345M

FST7345M

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 35A D61-3M

0

MBRT60030L

MBRT60030L

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 300A 3 TOWER

0

MBRTA500200

MBRTA500200

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 250A 3TOWER

0

MBRTA60035L

MBRTA60035L

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 300A 3TOWER

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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