Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MBRTA40045L

MBRTA40045L

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 200A 3TOWER

0

MBRF120200

MBRF120200

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 60A TO244AB

0

MBRTA500100R

MBRTA500100R

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 250A 3TOWER

0

MBR60045CTRL

MBR60045CTRL

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 300A 2 TOWER

0

MBRTA60035

MBRTA60035

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 300A 3TOWER

0

FST6345M

FST6345M

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 30A D61-3M

0

MBRTA40030RL

MBRTA40030RL

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 200A 3TOWER

0

MURT30005R

MURT30005R

GeneSiC Semiconductor

DIODE MODULE 50V 300A 3TOWER

0

MBR40045CTL

MBR40045CTL

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 200A 2 TOWER

0

MBRT50020

MBRT50020

GeneSiC Semiconductor

DIODE MODULE 20V 500A 3TOWER

0

MBRF30045

MBRF30045

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 150A TO244AB

0

MBRF200100

MBRF200100

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 60A TO244AB

0

MBRT50035

MBRT50035

GeneSiC Semiconductor

DIODE MODULE 35V 500A 3TOWER

0

MBRF40020

MBRF40020

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 200A TO244AB

0

MBRTA50040R

MBRTA50040R

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 250A 3TOWER

0

MURF10060

MURF10060

GeneSiC Semiconductor

DIODE MODULE 600V 100A TO244AB

0

MBRT50020R

MBRT50020R

GeneSiC Semiconductor

DIODE MODULE 20V 500A 3TOWER

0

MBRT60035RL

MBRT60035RL

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 300A 3 TOWER

0

MBRTA80060

MBRTA80060

GeneSiC Semiconductor

DIODE SCHOTTKY 60V 400A 3TOWER

0

MBRT500200R

MBRT500200R

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 250A 3 TOWER

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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