Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
CD411699B

CD411699B

Powerex, Inc.

DIODE MODULE 1.6KV 100A POWRBLOK

0

CD411299B

CD411299B

Powerex, Inc.

DIODE MODULE 1.2KV 100A POWRBLOK

0

CD411630

CD411630

Powerex, Inc.

DIODE MODULE 1.6KV 30A POWRBLOK

0

CD410899B

CD410899B

Powerex, Inc.

DIODE MODULE 800V 100A POWRBLOK

0

CD411660

CD411660

Powerex, Inc.

DIODE MODULE 1.6KV 60A POWRBLOK

0

LDR11466

LDR11466

Powerex, Inc.

DIODE MODULE 1.4KV POW-R-BLOK

0

CD410830

CD410830

Powerex, Inc.

DIODE MODULE 800V 30A POW-R-BLOK

0

CDD11610

CDD11610

Powerex, Inc.

DIODE MODULE 1.6KV 100A POWRBLOK

0

CD410860

CD410860

Powerex, Inc.

DIODE MODULE 800V 60A POW-R-BLOK

0

LDR11266

LDR11266

Powerex, Inc.

DIODE MODULE 1.2KV POW-R-BLOK

0

CD411260

CD411260

Powerex, Inc.

DIODE MODULE 1.2KV 60A POWRBLOK

0

LDR11066

LDR11066

Powerex, Inc.

DIODE MODULE 1KV POW-R-BLOK

0

CD411899B

CD411899B

Powerex, Inc.

DIODE MODULE 1.8KV 100A POWRBLOK

0

CD411099B

CD411099B

Powerex, Inc.

DIODE MODULE 1KV 100A POW-R-BLOK

0

CD411499B

CD411499B

Powerex, Inc.

DIODE MODULE 1.4KV 100A POWRBLOK

0

LDR10866

LDR10866

Powerex, Inc.

DIODE MODULE 800V POW-R-BLOK

0

QRC0630T30

QRC0630T30

Powerex, Inc.

DIODE MODULE 600V 100A

0

QRD1220R30

QRD1220R30

Powerex, Inc.

DIODE GEN PURP 1.2KV 140A

0

QRC1230T30

QRC1230T30

Powerex, Inc.

DIODE MODULE 1.2KV 149A

0

QRC1230R30

QRC1230R30

Powerex, Inc.

DIODE GEN PURP 1.2KV 210A

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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