Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
CD611216C

CD611216C

Powerex, Inc.

DIODE MODULE 1.2KV 160A

0

PD411011

PD411011

Powerex, Inc.

DIODE MODULE 1KV 1100A POWRBLOK

0

CD611816C

CD611816C

Powerex, Inc.

DIODE MODULE 1.8KV 160A

0

PD412411

PD412411

Powerex, Inc.

DIODE MODULE 2.4KV 1100A POWRBLK

0

ND412226

ND412226

Powerex, Inc.

DIODE MODULE DUAL

0

CD611016C

CD611016C

Powerex, Inc.

DIODE MODULE 1KV 160A

0

PD412211

PD412211

Powerex, Inc.

DIODE MODULE 2.2KV 1100A POWRBLK

0

CD611016B

CD611016B

Powerex, Inc.

DIODE MODULE 1KV 160A POW-R-BLOK

0

ND410835

ND410835

Powerex, Inc.

DIODE MODULE DUAL

0

PD410811

PD410811

Powerex, Inc.

DIODE MODULE 800V 1100A POWRBLOK

0

ND410826

ND410826

Powerex, Inc.

DIODE MODULE 800V 260A POWRBLOK

0

CD611216B

CD611216B

Powerex, Inc.

DIODE MODULE 1.2KV 160A POWRBLOK

0

PD411411

PD411411

Powerex, Inc.

DIODE MODULE 1.4KV 1100A POWRBLK

0

CD610816C

CD610816C

Powerex, Inc.

DIODE MODULE 800V 160A

0

PD414010

PD414010

Powerex, Inc.

DIODE MODULE DUAL

0

CD611416B

CD611416B

Powerex, Inc.

DIODE MODULE 1.4KV 160A POWRBLOK

0

PD411211

PD411211

Powerex, Inc.

DIODE MODULE 1.2KV 1100A POWRBLK

0

ND412426

ND412426

Powerex, Inc.

DIODE MODULE DUAL

0

ND412026

ND412026

Powerex, Inc.

DIODE MODULE 2KV 260A POW-R-BLOK

0

CD411230

CD411230

Powerex, Inc.

DIODE MODULE 1.2KV 30A POWRBLOK

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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